onsemi FDPF Type N-Channel MOSFET, 222 A, 100 V Enhancement, 3-Pin TO-220
- N° de stock RS:
- 181-1861
- Référence fabricant:
- FDPF2D3N10C
- Fabricant:
- onsemi
Actuellement indisponible
Nous ne savons pas si cet article sera de nouveau disponible. RS a l'intention de le retirer de son assortiment sous peu.
- N° de stock RS:
- 181-1861
- Référence fabricant:
- FDPF2D3N10C
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 222A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-220 | |
| Series | FDPF | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2.3mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 108nC | |
| Maximum Power Dissipation Pd | 45W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 16.07mm | |
| Length | 10.36mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 222A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-220 | ||
Series FDPF | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2.3mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 108nC | ||
Maximum Power Dissipation Pd 45W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 16.07mm | ||
Length 10.36mm | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.
Max RDS(on) = 2.3 mΩ at VGS = 10 V, ID = 222 A
Power Density & Shielded Gate
High Performance Trench Technology for Extremely Low RDS(on)
High power density with Shielded gate technology
Extremely Low Reverse Recovery Charge, Qrr
Low Vds spike internal snubber function.
Low Gate Charge, QG = 108nC (Typ.)
Low switching loss
High Power and Current Handling Capability
Low Qrr/Trr
Soft recovery performance
Synchronous Rectification for ATX / Server / Workstation / Telecom PSU / Adapter and Industrial Power Supplies.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
Server
Telecom
Computing (ATX, Workstation, Adapter, Industrial Power Supplies etc.)
Motor Drive
Uninterruptible Power Supplies
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