Vishay SIHH Type N-Channel MOSFET, 19 A, 600 V Enhancement, 4-Pin PowerPAK 8 x 8 SIHH150N60E-T1-GE3

N° de stock RS:: 279-9913
Référence fabricant:: SIHH150N60E-T1-GE3
Fabricant:: Vishay

Vishay SIHH Type N-Channel MOSFET, 19 A, 600 V Enhancement, 4-Pin PowerPAK 8 x 8 SIHH150N60E-T1-GE3

Sous-total (1 bobine de 3000 unités)*

7 638,00 €

(TVA exclue)

9 243,00 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

En stock

Plus 3 000 unité(s) expédiée(s) à partir du 31 août 2026

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Unité	Prix par unité	la bobine*
3000 +	2,546 €	7 638,00 €

*Prix donné à titre indicatif

N° de stock RS:: 279-9913
Référence fabricant:: SIHH150N60E-T1-GE3
Fabricant:: Vishay

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Législations et de normes

Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Vishay
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	19A
	Maximum Drain Source Voltage Vds	600V
	Series	SIHH
	Package Type	PowerPAK 8 x 8
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	0.158Ω
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	156W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	36nC
	Forward Voltage Vf	1.2V
	Maximum Gate Source Voltage Vgs	30V
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Length	8mm
	Automotive Standard	No

	Sélectionner tout
	Marque Vishay
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 19A
	Maximum Drain Source Voltage Vds 600V
	Series SIHH
	Package Type PowerPAK 8 x 8
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 0.158Ω
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 156W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 36nC
	Forward Voltage Vf 1.2V
	Maximum Gate Source Voltage Vgs 30V
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Length 8mm
	Automotive Standard No

Datasheet - SIHH150N60E-T1-GE3

Vishay SIHH Series MOSFET, 600V Maximum Drain Source Voltage, 19A Maximum Continuous Drain Current - SIHH150N60E-T1-GE3

This MOSFET is a high-voltage N-channel device designed for power switching in surface-mount assemblies. It operates over a wide temperature span and supports substantial continuous current, making it suitable for demanding electronic systems that require robust voltage handling and thermal endurance.

Features and Benefits:

• 600V rating enables high-voltage switching applications
• 19A continuous drain current supports significant load currents
• 0.158 Ω low on-resistance reduces conduction losses
• 156W power dissipation allows elevated thermal loading
• 36 nC gate charge provides predictable switching performance
• Vgs 30V gate limit offers gate overvoltage protection

Applications

• Suitable for high-voltage power converters and inverters
• Ideal for switch-mode power supplies in industrial equipment
• Used with motor drives requiring strong current capability
• Can be used for rugged power switching in telecoms systems
• Suitable for compact surface-mount power modules

What thermal conditions can it withstand during operation?

It is rated for operation from -55 °C up to 150 °C, allowing use in environments with extreme temperature ranges.

What mounting type is required for PCB integration?

It is supplied in a PowerPAK 8x8 surface-mount package intended for direct PCB soldering.

How many electrical connections does the component provide?

The device has a four-pin configuration to interface with gate, drain and source layout requirements.

What channel conduction mode does it use for switching?

It is an enhancement-mode N-channel device, conducting when a positive gate-source voltage is applied.