Vishay SIHH Type N-Channel MOSFET, 19 A, 600 V Enhancement, 4-Pin PowerPAK 8 x 8 SIHH150N60E-T1-GE3
- N° de stock RS:
- 279-9913
- Référence fabricant:
- SIHH150N60E-T1-GE3
- Fabricant:
- Vishay
Sous-total (1 bobine de 3000 unités)*
7 638,00 €
(TVA exclue)
9 243,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- 3 000 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 3000 + | 2,546 € | 7 638,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 279-9913
- Référence fabricant:
- SIHH150N60E-T1-GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 19A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | SIHH | |
| Package Type | PowerPAK 8 x 8 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 0.158Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 156W | |
| Typical Gate Charge Qg @ Vgs | 36nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Length | 8mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 19A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series SIHH | ||
Package Type PowerPAK 8 x 8 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 0.158Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 156W | ||
Typical Gate Charge Qg @ Vgs 36nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Length 8mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Vishay SIHH Series MOSFET, 600V Drain Source Voltage, 19A Continuous Drain Current - SIHH150N60E-T1-GE3
This MOSFET is a high-voltage N-channel transistor designed for switching and power-management roles in industrial and electronic systems. It operates across a wide thermal range and is packaged for surface mounting, making it suitable for Compact power assemblies where controlled switching of high voltages is required.
Features and Benefits:
• 600V drain-source rating enables high-voltage switching applications • 19A continuous drain current supports substantial load currents • 0.158Ω Rds(on) reduces conduction losses at operating current • 36nC typical gate charge allows predictable switching energy • 156W maximum power dissipation manages thermal loading in designs • 30V gate threshold accommodates standard gate-drive voltages
Applications
• Suitable for high-voltage power supplies and inverters • Ideal for industrial motor-drive switching stages • Used for switch-mode power conversion in automation systems • Can be used for high-voltage load switching in test equipment
What temperature extremes can it tolerate during operation?
It is rated to operate down to -55°C and up to 150°C, enabling use in harsh thermal environments.
How is the device mounted in Compact power modules?
It is supplied in a PowerPAK 8x8 surface-mount package with four pins for low-profile PCB assembly.
What gate-drive constraints should be observed?
The gate-source voltage must not exceed 30V to avoid exceeding gate limits.
How does its package affect thermal handling?
The PowerPAK 8x8 surface package combined with the 156W dissipation rating permits efficient heat transfer when paired with appropriate PCB thermal design.
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