Vishay TrenchFET Type N-Channel MOSFET, 60 A, 30 V Enhancement, 8-Pin PowerPAK SO-8 SiRA10BDP-T1-GE3
- N° de stock RS:
- 735-112
- Référence fabricant:
- SiRA10BDP-T1-GE3
- Fabricant:
- Vishay
Visuel non contractuel
Sous-total (1 ruban de 1 unité)*
1,10 €
(TVA exclue)
1,33 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 07 septembre 2026
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Ruban(s) | le ruban |
|---|---|
| 1 + | 1,10 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 735-112
- Référence fabricant:
- SiRA10BDP-T1-GE3
- Fabricant:
- Vishay
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Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PowerPAK SO-8 | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.005Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 24.1nC | |
| Maximum Power Dissipation Pd | 43W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Width | 5.3mm | |
| Standards/Approvals | RoHS Compliant | |
| Height | 1.1mm | |
| Length | 6.25mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PowerPAK SO-8 | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.005Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 24.1nC | ||
Maximum Power Dissipation Pd 43W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Width 5.3mm | ||
Standards/Approvals RoHS Compliant | ||
Height 1.1mm | ||
Length 6.25mm | ||
Automotive Standard No | ||
- Pays d'origine :
- TW
The Vishay N channel MOSFET is designed for efficient and reliable power switching in high-performance power electronics. it is fully Rg and UIS tested to ensure robustness under electrical stress and demanding operating conditions. optimized for low losses and fast switching, it supports Compact high power density designs while meeting RoHS compliant and halogen free requirements.
Offers 100 percent Rg and UIS testing for proven device reliability
Supports high power density dc/dc converter applications
Enables efficient synchronous rectification performance
Complies with RoHS standards and halogen free requirements
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