Infineon SPP18P06P-H Type P-Channel MOSFET, -18.7 A, 60 V Enhancement, 3-Pin PG-TO252-3 SPP18P06PHXKSA1
- N° de stock RS:
- 273-7552
- Référence fabricant:
- SPP18P06PHXKSA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 tube de 50 unités)*
39,85 €
(TVA exclue)
48,20 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 450 unité(s) expédiée(s) à partir du 29 décembre 2025
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le tube* |
|---|---|---|
| 50 - 50 | 0,797 € | 39,85 € |
| 100 + | 0,638 € | 31,90 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 273-7552
- Référence fabricant:
- SPP18P06PHXKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | -18.7A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PG-TO252-3 | |
| Series | SPP18P06P-H | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.13Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 81.1W | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Forward Voltage Vf | 1.33V | |
| Typical Gate Charge Qg @ Vgs | 28nC | |
| Maximum Operating Temperature | 175°C | |
| Height | 1.5mm | |
| Length | 40mm | |
| Standards/Approvals | Qualified according to AEC Q101, Halogen Free according to IEC61249-2-21, RoHS | |
| Width | 40 mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id -18.7A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PG-TO252-3 | ||
Series SPP18P06P-H | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.13Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 81.1W | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Forward Voltage Vf 1.33V | ||
Typical Gate Charge Qg @ Vgs 28nC | ||
Maximum Operating Temperature 175°C | ||
Height 1.5mm | ||
Length 40mm | ||
Standards/Approvals Qualified according to AEC Q101, Halogen Free according to IEC61249-2-21, RoHS | ||
Width 40 mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon MOSFET is a P channel small signal MOSFET. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on state resistance and figure of merit characteristics. It is a halogen free according to IEC61249 2 21.
RoHS compliant
Avalanche rated
Enhancement mode
Pb free lead finishing
Qualified according to AEC Q101
Liens connexes
- Infineon P-Channel MOSFET Transistor 3-Pin PG-TO252-3 SPP18P06PHXKSA1
- Infineon P-Channel MOSFET Transistor 3-Pin PG-TO252-3 SPD04P10PLGBTMA1
- Infineon N-Channel MOSFET Transistor, 13 A PG-TO252-3 IPD78CN10NGATMA1
- Infineon N-Channel MOSFET Transistor, 34 A PG-TO252-3 IPD320N20N3GATMA1
- Infineon N-Channel MOSFET Transistor, 75 A PG-TO252-3 IPD110N12N3GATMA1
- Infineon N-Channel MOSFET Transistor, 30 A PG-TO252-3-11 IPD30N06S2L23ATMA3
- Infineon MOSFET Transistor, 4.4 A PG-TO252 IPD60R950C6ATMA1
- Infineon N-Channel MOSFET Transistor 100 V PG-TO252-3 IPD130N10NF2SATMA1