Infineon SPP18P06P-H Type P-Channel MOSFET, -18.7 A, 60 V Enhancement, 3-Pin PG-TO252-3 SPP18P06PHXKSA1
- N° de stock RS:
- 273-7552
- Référence fabricant:
- SPP18P06PHXKSA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 tube de 50 unités)*
39,85 €
(TVA exclue)
48,20 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 450 unité(s) expédiée(s) à partir du 22 janvier 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le tube* |
|---|---|---|
| 50 - 50 | 0,797 € | 39,85 € |
| 100 + | 0,638 € | 31,90 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 273-7552
- Référence fabricant:
- SPP18P06PHXKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -18.7A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PG-TO252-3 | |
| Series | SPP18P06P-H | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.13Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.33V | |
| Maximum Power Dissipation Pd | 81.1W | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Typical Gate Charge Qg @ Vgs | 28nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | Qualified according to AEC Q101, Halogen Free according to IEC61249-2-21, RoHS | |
| Height | 1.5mm | |
| Width | 40 mm | |
| Length | 40mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -18.7A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PG-TO252-3 | ||
Series SPP18P06P-H | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.13Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.33V | ||
Maximum Power Dissipation Pd 81.1W | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Typical Gate Charge Qg @ Vgs 28nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals Qualified according to AEC Q101, Halogen Free according to IEC61249-2-21, RoHS | ||
Height 1.5mm | ||
Width 40 mm | ||
Length 40mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon MOSFET is a P channel small signal MOSFET. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on state resistance and figure of merit characteristics. It is a halogen free according to IEC61249 2 21.
RoHS compliant
Avalanche rated
Enhancement mode
Pb free lead finishing
Qualified according to AEC Q101
Liens connexes
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