Infineon SPP18P06P-H Type P-Channel MOSFET, -18.7 A, 60 V Enhancement, 3-Pin PG-TO252-3 SPP18P06PHXKSA1
- N° de stock RS:
- 273-7552
- Référence fabricant:
- SPP18P06PHXKSA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 tube de 50 unités)*
33,75 €
(TVA exclue)
40,85 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 400 unité(s) expédiée(s) à partir du 12 octobre 2026
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Unité | Prix par unité | le tube* |
|---|---|---|
| 50 - 50 | 0,675 € | 33,75 € |
| 100 + | 0,552 € | 27,60 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 273-7552
- Référence fabricant:
- SPP18P06PHXKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | -18.7A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | SPP18P06P-H | |
| Package Type | PG-TO252-3 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.13Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 8V | |
| Forward Voltage Vf | 1.33V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 81.1W | |
| Typical Gate Charge Qg @ Vgs | 28nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 40mm | |
| Height | 1.5mm | |
| Width | 40mm | |
| Standards/Approvals | Qualified according to AEC Q101, Halogen Free according to IEC61249-2-21, RoHS | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id -18.7A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series SPP18P06P-H | ||
Package Type PG-TO252-3 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.13Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 8V | ||
Forward Voltage Vf 1.33V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 81.1W | ||
Typical Gate Charge Qg @ Vgs 28nC | ||
Maximum Operating Temperature 175°C | ||
Length 40mm | ||
Height 1.5mm | ||
Width 40mm | ||
Standards/Approvals Qualified according to AEC Q101, Halogen Free according to IEC61249-2-21, RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon MOSFET is a P channel small signal MOSFET. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on state resistance and figure of merit characteristics. It is a halogen free according to IEC61249 2 21.
RoHS compliant
Avalanche rated
Enhancement mode
Pb free lead finishing
Qualified according to AEC Q101
Liens connexes
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