Infineon SPD04P10PL G Type P-Channel MOSFET, -4.2 A, 100 V Enhancement, 3-Pin PG-TO252-3
- N° de stock RS:
- 273-7551
- Référence fabricant:
- SPD04P10PLGBTMA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 10 unités)*
6,31 €
(TVA exclue)
7,64 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Dernier stock RS
- 2 490 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
Unité | Prix par unité | le paquet* |
|---|---|---|
| 10 - 40 | 0,631 € | 6,31 € |
| 50 - 90 | 0,619 € | 6,19 € |
| 100 - 240 | 0,578 € | 5,78 € |
| 250 - 990 | 0,533 € | 5,33 € |
| 1000 + | 0,524 € | 5,24 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 273-7551
- Référence fabricant:
- SPD04P10PLGBTMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -4.2A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | PG-TO252-3 | |
| Series | SPD04P10PL G | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 850mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 38W | |
| Forward Voltage Vf | 0.94V | |
| Typical Gate Charge Qg @ Vgs | 12nC | |
| Maximum Operating Temperature | 175°C | |
| Height | 1.5mm | |
| Length | 40mm | |
| Standards/Approvals | AEC Q101, RoHS | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -4.2A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type PG-TO252-3 | ||
Series SPD04P10PL G | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 850mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 38W | ||
Forward Voltage Vf 0.94V | ||
Typical Gate Charge Qg @ Vgs 12nC | ||
Maximum Operating Temperature 175°C | ||
Height 1.5mm | ||
Length 40mm | ||
Standards/Approvals AEC Q101, RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon MOSFET is a P channel power MOSFET. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on state resistance and figure of merit characteristics. It is a qualified according to AEC Q101.
Logic level
RoHS compliant
Enhancement mode
Pb free lead plating
Liens connexes
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