Infineon IPT Type N-Channel Power Transistor, 52 A, 650 V Enhancement, 8-Pin PG-HSOF-8 IPT60R045CFD7XTMA1
- N° de stock RS:
- 273-2797
- Référence fabricant:
- IPT60R045CFD7XTMA1
- Fabricant:
- Infineon
Sous-total (1 bobine de 2000 unités)*
7 504,00 €
(TVA exclue)
9 080,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 12 juin 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 2000 + | 3,752 € | 7 504,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 273-2797
- Référence fabricant:
- IPT60R045CFD7XTMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | Power Transistor | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 52A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | PG-HSOF-8 | |
| Series | IPT | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 45mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 272W | |
| Typical Gate Charge Qg @ Vgs | 79nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS, JEDEC for Industrial Applications | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type Power Transistor | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 52A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type PG-HSOF-8 | ||
Series IPT | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 45mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 272W | ||
Typical Gate Charge Qg @ Vgs 79nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS, JEDEC for Industrial Applications | ||
Automotive Standard No | ||
The Infineon MOSFET is a 600V CoolMOS CFD7 power transistor. The CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction principle and pioneered by Infineon Technologies. The latest CoolMOS CFD7 is the successor to the CoolMOS CFD2 series and is an optimized platform tailored to target soft switching applications such as phase shift full bridge and LLC. Resulting from reduced gate charge, best in class reverse recovery charge and improved turn off behaviour CoolMOSCFD7 offers highest efficiency in resonant topologies.
RoHS compliant
Low gate charge
Ultra fast body diode
Increased power density solutions
Excellent hard commutation ruggedness
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