Infineon IPT Type N-Channel MOSFET, 313 A, 60 V Enhancement, 8-Pin PG-HSOF-8
- N° de stock RS:
- 273-5352
- Référence fabricant:
- IPT012N06NATMA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 unité)*
5,77 €
(TVA exclue)
6,98 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 90 unité(s) expédiée(s) à partir du 19 janvier 2026
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Unité | Prix par unité |
|---|---|
| 1 - 49 | 5,77 € |
| 50 - 99 | 4,80 € |
| 100 - 249 | 4,43 € |
| 250 - 999 | 4,12 € |
| 1000 + | 4,03 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 273-5352
- Référence fabricant:
- IPT012N06NATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 313A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | IPT | |
| Package Type | PG-HSOF-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.2mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 214W | |
| Typical Gate Charge Qg @ Vgs | 106nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC61249-2-21, JEDEC1, RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 313A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series IPT | ||
Package Type PG-HSOF-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.2mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 214W | ||
Typical Gate Charge Qg @ Vgs 106nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC61249-2-21, JEDEC1, RoHS | ||
Automotive Standard No | ||
The Infineon Power MOSFET is optimized for high current applications such as forklift, light electric vehicles, POL and telecom. This package is a perfect solution for high power applications where highest efficiency, outstanding EMI behaviour as well as best thermal behaviour and space reduction are required. It is qualified according to JEDEC1 for target applications.
Halogen free
RoHS compliant
Pb free lead plating
Superior thermal resistance
100 percent avalanche tested
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