Infineon IPT Type N-Channel Power Transistor, 137 A, 200 V Enhancement, 8-Pin PG-HSOF-8 IPT067N20NM6ATMA1
- N° de stock RS:
- 349-130
- Référence fabricant:
- IPT067N20NM6ATMA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 unité)*
7,96 €
(TVA exclue)
9,63 €
(TVA incluse)
Informations sur le stock actuellement non accessibles - Veuillez vérifier plus tard
Unité | Prix par unité |
|---|---|
| 1 - 9 | 7,96 € |
| 10 - 99 | 7,16 € |
| 100 - 499 | 6,60 € |
| 500 - 999 | 6,13 € |
| 1000 + | 5,48 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 349-130
- Référence fabricant:
- IPT067N20NM6ATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | Power Transistor | |
| Maximum Continuous Drain Current Id | 137A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Series | IPT | |
| Package Type | PG-HSOF-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 6.7mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 71nC | |
| Maximum Power Dissipation Pd | 300W | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | J-STD-020, IEC61249-2-21, 100% Avalanche Tested, RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type Power Transistor | ||
Maximum Continuous Drain Current Id 137A | ||
Maximum Drain Source Voltage Vds 200V | ||
Series IPT | ||
Package Type PG-HSOF-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 6.7mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 71nC | ||
Maximum Power Dissipation Pd 300W | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals J-STD-020, IEC61249-2-21, 100% Avalanche Tested, RoHS | ||
Automotive Standard No | ||
- Pays d'origine :
- MY
The Infineon OptiMOS 6 Power Transistor, 200 V is an N-channel, normal level MOSFET designed for high efficiency power applications. It features very low on-resistance (RDS(on)), minimizing conduction losses. The excellent gate charge x RDS(on) product (FOM) ensures superior switching performance, while the very low reverse recovery charge (Qrr) contributes to efficient operation. With a high avalanche energy rating, it offers enhanced robustness, and it is capable of operating at 175°C, making it reliable even in harsh environments.
Pb free lead plating
RoHS compliant
Halogen free according to IEC61249-2-21
MSL 1 classified according to J-STD-020
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