STMicroelectronics STP Type N-Channel MOSFET, 12 A, 800 V Enhancement, 3-Pin TO-220 STP80N340K6
- N° de stock RS:
- 269-5163
- Référence fabricant:
- STP80N340K6
- Fabricant:
- STMicroelectronics
Offre groupée disponible
Sous-total (1 tube de 50 unités)*
122,05 €
(TVA exclue)
147,70 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 450 unité(s) expédiée(s) à partir du 07 janvier 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le tube* |
|---|---|---|
| 50 - 50 | 2,441 € | 122,05 € |
| 100 - 100 | 2,378 € | 118,90 € |
| 150 + | 2,319 € | 115,95 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 269-5163
- Référence fabricant:
- STP80N340K6
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | STP | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 340mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.5V | |
| Typical Gate Charge Qg @ Vgs | 17.8nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 115W | |
| Maximum Operating Temperature | 150°C | |
| Width | 10.4 mm | |
| Height | 4.6mm | |
| Length | 28.9mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 800V | ||
Series STP | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 340mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.5V | ||
Typical Gate Charge Qg @ Vgs 17.8nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 115W | ||
Maximum Operating Temperature 150°C | ||
Width 10.4 mm | ||
Height 4.6mm | ||
Length 28.9mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
The STMicroelectronics N-channel Power MOSFET is a very high voltage is designed using the ultimate MDmesh K6 technology result in the best class on resistance per area and gate charge for applications requiring superior power density and high efficiency.
Ultra low gate charge
100 percent avalanche tested
Liens connexes
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