STMicroelectronics STP Type N-Channel MOSFET, 55 A, 650 V Enhancement, 3-Pin TO-220
- N° de stock RS:
- 248-9686
- Référence fabricant:
- STP60N043DM9
- Fabricant:
- STMicroelectronics
Sous-total (1 tube de 50 unités)*
400,30 €
(TVA exclue)
484,35 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 750 unité(s) expédiée(s) à partir du 12 janvier 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le tube* |
|---|---|---|
| 50 + | 8,006 € | 400,30 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 248-9686
- Référence fabricant:
- STP60N043DM9
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 55A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-220 | |
| Series | STP | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 45mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.5V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Power Dissipation Pd | 245W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Width | 10.4 mm | |
| Length | 28.9mm | |
| Height | 4.6mm | |
| Standards/Approvals | UL | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 55A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-220 | ||
Series STP | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 45mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.5V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Power Dissipation Pd 245W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Width 10.4 mm | ||
Length 28.9mm | ||
Height 4.6mm | ||
Standards/Approvals UL | ||
Automotive Standard AEC-Q101 | ||
The STMicroelectronics product is a N channel power MOSFET based on the most innovative super junction MDmesh DM9 technology, suitable for medium or high voltage MOSFETs featuring very low RDS on per area coupled with a fast recovery diode. The silicon based DM9 technology benefits from a multi drain manufacturing process which allows an enhanced device structure. The fast recovery diode featuring very low recovery charge, time and RDS on makes this fast switching super junction power MOSFET tailored for the most demanding high efficiency bridge topologies and ZVS phase shift converters.
Fast recovery body diode
Worldwide best RDS on per area among silicon based fast recovery devices
Low gate charge, input capacitance and resistance
100 percent avalanche tested
Extremely dv/dt ruggedness
Liens connexes
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