STMicroelectronics STP Type N-Channel MOSFET, 6 A, 800 V Enhancement, 3-Pin TO-220 STP80N900K6
- N° de stock RS:
- 285-5915
- Référence fabricant:
- STP80N900K6
- Fabricant:
- STMicroelectronics
Offre groupée disponible
Sous-total (1 unité)*
1,02 €
(TVA exclue)
1,23 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
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- 72 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité |
|---|---|
| 1 - 4 | 1,02 € |
| 5 - 9 | 1,00 € |
| 10 - 24 | 0,97 € |
| 25 + | 0,95 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 285-5915
- Référence fabricant:
- STP80N900K6
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 6A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | STP | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 900mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 7nC | |
| Forward Voltage Vf | 1.5V | |
| Maximum Power Dissipation Pd | 68W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Operating Temperature | 150°C | |
| Width | 10.4 mm | |
| Standards/Approvals | RoHS | |
| Length | 28.9mm | |
| Height | 4.6mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 6A | ||
Maximum Drain Source Voltage Vds 800V | ||
Series STP | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 900mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 7nC | ||
Forward Voltage Vf 1.5V | ||
Maximum Power Dissipation Pd 68W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Operating Temperature 150°C | ||
Width 10.4 mm | ||
Standards/Approvals RoHS | ||
Length 28.9mm | ||
Height 4.6mm | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
The STMicroelectronics very high voltage N-channel Power MOSFET is designed using the ultimate MDmesh K6 technology based on 20 years STMicroelectronics experience on super junction technology. The result is the best-in-class on-resistance per area and gate charge for applications requiring superior power density and high efficiency.
Worldwide best RDS(on) x area
Worldwide best FOM (figure of merit)
Ultra low gate charge
100% avalanche tested
Zener-protected
Liens connexes
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