STMicroelectronics STP Type N-Channel MOSFET, 55 A, 650 V Enhancement, 3-Pin TO-220
- N° de stock RS:
- 248-9688
- Référence fabricant:
- STP65N045M9
- Fabricant:
- STMicroelectronics
Sous-total (1 tube de 50 unités)*
391,50 €
(TVA exclue)
473,50 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 450 unité(s) expédiée(s) à partir du 21 janvier 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le tube* |
|---|---|---|
| 50 + | 7,83 € | 391,50 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 248-9688
- Référence fabricant:
- STP65N045M9
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 55A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | STP | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 45mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 245W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Forward Voltage Vf | 1.5V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 28.9mm | |
| Height | 4.6mm | |
| Standards/Approvals | UL | |
| Width | 10.4 mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 55A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series STP | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 45mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 245W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Forward Voltage Vf 1.5V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 28.9mm | ||
Height 4.6mm | ||
Standards/Approvals UL | ||
Width 10.4 mm | ||
Automotive Standard AEC-Q101 | ||
The STMicroelectronics product is a N channel power MOSFET based on the most innovative super junction MDmesh DM9 technology, suitable for medium or high voltage MOSFETs featuring very low RDS on per area coupled with a fast recovery diode. The silicon based DM9 technology benefits from a multi drain manufacturing process which allows an enhanced device structure. The resulting product has one of the lower on resistance and reduced gate charge values, among all silicon based fast switching super junction power MOSFETs, making it particularly suitable for applications that require superior power density and outstanding efficiency.
Worldwide best FOM RDS on Qg among silicon based devices
Higher VDSS rating
Higher dv/dt capability
Excellent switching performance
Easy to drive
100 percent avalanche tested
Liens connexes
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