STMicroelectronics STP Type N-Channel MOSFET, 55 A, 650 V Enhancement, 3-Pin TO-220
- N° de stock RS:
- 248-9688
- Référence fabricant:
- STP65N045M9
- Fabricant:
- STMicroelectronics
Sous-total (1 tube de 50 unités)*
391,50 €
(TVA exclue)
473,50 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 450 unité(s) expédiée(s) à partir du 25 mai 2026
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Unité | Prix par unité | le tube* |
|---|---|---|
| 50 + | 7,83 € | 391,50 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 248-9688
- Référence fabricant:
- STP65N045M9
- Fabricant:
- STMicroelectronics
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Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 55A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-220 | |
| Series | STP | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 45mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 245W | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Forward Voltage Vf | 1.5V | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.6mm | |
| Length | 28.9mm | |
| Standards/Approvals | UL | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 55A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-220 | ||
Series STP | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 45mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 245W | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Forward Voltage Vf 1.5V | ||
Maximum Operating Temperature 175°C | ||
Height 4.6mm | ||
Length 28.9mm | ||
Standards/Approvals UL | ||
Automotive Standard AEC-Q101 | ||
The STMicroelectronics product is a N channel power MOSFET based on the most innovative super junction MDmesh DM9 technology, suitable for medium or high voltage MOSFETs featuring very low RDS on per area coupled with a fast recovery diode. The silicon based DM9 technology benefits from a multi drain manufacturing process which allows an enhanced device structure. The resulting product has one of the lower on resistance and reduced gate charge values, among all silicon based fast switching super junction power MOSFETs, making it particularly suitable for applications that require superior power density and outstanding efficiency.
Worldwide best FOM RDS on Qg among silicon based devices
Higher VDSS rating
Higher dv/dt capability
Excellent switching performance
Easy to drive
100 percent avalanche tested