Microchip VP2110 Type P-Channel MOSFET, -120 mA, 100 V Enhancement, 3-Pin SOT-23 VP2110K1-G
- N° de stock RS:
- 264-8951
- Référence fabricant:
- VP2110K1-G
- Fabricant:
- Microchip
Offre groupée disponible
Sous-total (1 paquet de 10 unités)*
7,28 €
(TVA exclue)
8,81 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- 1 840 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 10 - 40 | 0,728 € | 7,28 € |
| 50 - 90 | 0,714 € | 7,14 € |
| 100 - 240 | 0,382 € | 3,82 € |
| 250 - 990 | 0,376 € | 3,76 € |
| 1000 + | 0,368 € | 3,68 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 264-8951
- Référence fabricant:
- VP2110K1-G
- Fabricant:
- Microchip
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Microchip | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -120mA | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | VP2110 | |
| Package Type | SOT-23 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 12Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 0.36W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 2V | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.3 mm | |
| Length | 2.9mm | |
| Height | 1.12mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Microchip | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -120mA | ||
Maximum Drain Source Voltage Vds 100V | ||
Series VP2110 | ||
Package Type SOT-23 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 12Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 0.36W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 2V | ||
Maximum Operating Temperature 150°C | ||
Width 1.3 mm | ||
Length 2.9mm | ||
Height 1.12mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Microchip P-Channel low threshold, enhancement-mode (normally-off) MOSFET utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral source-to-drain diode
High input impedance and high gain
Liens connexes
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