Infineon IPP N-Channel MOSFET, 193 A, 40 V Enhancement, 3-Pin TO-220 IPP015N04NF2SAKMA1

N° de stock RS:: 260-1057
Référence fabricant:: IPP015N04NF2SAKMA1
Fabricant:: Infineon

Infineon IPP N-Channel MOSFET, 193 A, 40 V Enhancement, 3-Pin TO-220 IPP015N04NF2SAKMA1

Sous-total (1 tube de 1000 unités)*

658,00 €

(TVA exclue)

796,00 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

Temporairement en rupture de stock

Expédition à partir du 07 juin 2027

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Unité	Prix par unité	le tube*
1000 +	0,658 €	658,00 €

*Prix donné à titre indicatif

N° de stock RS:: 260-1057
Référence fabricant:: IPP015N04NF2SAKMA1
Fabricant:: Infineon

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Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	193A
	Maximum Drain Source Voltage Vds	40V
	Package Type	TO-220
	Series	IPP
	Mount Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance Rds	1.5mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	188W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	106nC
	Forward Voltage Vf	860mV
	Maximum Gate Source Voltage Vgs	20V
	Maximum Operating Temperature	175°C
	Standards/Approvals	IEC 61249-2-21, RoHS
	Width	10.67mm
	Length	15.8mm
	Height	4.75mm
	Automotive Standard	No

	Sélectionner tout
	Marque Infineon
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 193A
	Maximum Drain Source Voltage Vds 40V
	Package Type TO-220
	Series IPP
	Mount Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance Rds 1.5mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 188W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 106nC
	Forward Voltage Vf 860mV
	Maximum Gate Source Voltage Vgs 20V
	Maximum Operating Temperature 175°C
	Standards/Approvals IEC 61249-2-21, RoHS
	Width 10.67mm
	Length 15.8mm
	Height 4.75mm
	Automotive Standard No

Datasheet - IPP015N04NF2SAKMA1

Infineon IPP Series MOSFET, 40V Maximum Drain-Source Voltage, 193A Maximum Continuous Drain Current - IPP015N04NF2SAKMA1

This MOSFET is a high-current N-channel transistor designed for power switching and load control in demanding electronic systems. It operates over a wide temperature range and is supplied in a through-hole TO-220 package suited to conventional heatsinking and assembly methods. The device conforms to specified material and environmental standards and is intended for use where low conduction loss and significant continuous current capability are required.

Features and Benefits:

• 1.5mΩ Rds(on) lowers conduction losses and improves efficiency
• 188W power dissipation supports sustained high-load operation
• 0.86V forward voltage reduces voltage drop under conduction
• 106nC typical gate charge allows predictable switching performance
• 20V maximum gate voltage preserves gate integrity under control signals

Applications

• Suitable for power supply primary switching stages
• Ideal for motor drive output stages requiring high current
• Used with heatsinks for high-power industrial converters
• Can be used for battery management in high-current systems

What temperature extremes can it tolerate in operation?

It is rated to operate from -55°C up to 175°C.

How many pins does the device present for PCB mounting?

It has a three-pin configuration compatible with standard TO-220 layouts.

Is it compliant with environmental or material standards?

It meets RoHS requirements and follows IEC 61249-2-21 specifications.

What channel conduction mode and type does it use?

It is an enhancement-mode N-channel device.

What is the maximum continuous current capacity?

It is specified to carry up to 193A continuously.