Infineon HEXFET Type N-Channel MOSFET, 64 A, 55 V TO-263 IRFZ48NSTRLPBF
- N° de stock RS:
- 258-3990
- Référence fabricant:
- IRFZ48NSTRLPBF
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 paquet de 2 unités)*
3,17 €
(TVA exclue)
3,836 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- 568 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 2 - 18 | 1,585 € | 3,17 € |
| 20 - 48 | 1,42 € | 2,84 € |
| 50 - 98 | 1,33 € | 2,66 € |
| 100 - 198 | 1,25 € | 2,50 € |
| 200 + | 1,16 € | 2,32 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 258-3990
- Référence fabricant:
- IRFZ48NSTRLPBF
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 64A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Package Type | TO-263 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 0.014Ω | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 130W | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 81nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Distrelec Product Id | 304-40-547 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 64A | ||
Maximum Drain Source Voltage Vds 55V | ||
Package Type TO-263 | ||
Series HEXFET | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 0.014Ω | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 130W | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 81nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Distrelec Product Id 304-40-547 | ||
The Infineon HEXFET power MOSFETs from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.
Advanced Process Technology
Surface Mount
Low-profile through-hole
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Liens connexes
- Infineon HEXFET N-Channel MOSFET 55 V D2PAK IRFZ48NSTRLPBF
- Infineon HEXFET N-Channel MOSFET 100 V, 3-Pin D2PAK IRL2910STRLPBF
- Infineon HEXFET N-Channel MOSFET 55 V, 3-Pin D2PAK IRF3205STRLPBF
- Infineon HEXFET N-Channel MOSFET 55 V, 3-Pin D2PAK IRF1010ZSTRLPBF
- Infineon HEXFET N-Channel MOSFET 55 V, 3-Pin D2PAK IRLZ34NSTRLPBF
- Infineon HEXFET N-Channel MOSFET 55 V, 3-Pin D2PAK IRF1010NSTRLPBF
- Infineon HEXFET N-Channel MOSFET 55 V, 3-Pin D2PAK IRL3705ZSTRLPBF
- Infineon HEXFET N-Channel MOSFET 55 V, 3-Pin D2PAK AUIRF3205ZS