Infineon HEXFET Type N-Channel MOSFET, 224 A, 150 V Enhancement TO-247 IRF150P220AKMA1

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Sous-total (1 tube de 25 unités)*

181,20 €

(TVA exclue)

219,25 €

(TVA incluse)

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  • Plus 75 unité(s) expédiée(s) à partir du 02 novembre 2026
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Unité
Prix par unité
le tube*
25 - 257,248 €181,20 €
50 - 1006,886 €172,15 €
125 +6,596 €164,90 €

*Prix donné à titre indicatif

N° de stock RS:
258-3954
Référence fabricant:
IRF150P220AKMA1
Fabricant:
Infineon
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Marque

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

224A

Maximum Drain Source Voltage Vds

150V

Series

HEXFET

Package Type

TO-247

Mount Type

Surface

Maximum Drain Source Resistance Rds

2.70mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Operating Temperature

+175°C

Standards/Approvals

RoHS

Automotive Standard

No

Infineon HEXFET Series MOSFET, 150V Drain-Source Voltage, 224A Continuous Drain Current - IRF150P220AKMA1


This MOSFET is a high‑power enhancement‑mode N‑channel transistor designed for demanding switching and power conversion roles. It operates across an extended temperature span and is packaged for surface mounting to support heat dissipation and robust handling in power assemblies. RoHS compliance indicates suitability for environments requiring restricted‑substance adherence.

Features and Benefits:


• Low on‑resistance reduces conduction losses and improves efficiency
• High continuous current capability supports heavy‑load switching
• 150V voltage rating enables high‑voltage power stages
• Wide temperature tolerance permits operation in extreme conditions
• Low forward voltage lowers power dissipation in diode conduction

Applications


• Suitable for motor drive inverter stages in industrial equipment
• Ideal for high‑current DC‑DC converters and power supplies
• Used with bridge topologies in electric traction systems
• Can be used for high‑power switching in renewable inverters
• Suitable for robust power modules requiring surface mounting

What is the device’s package type and mounting orientation?


It is supplied in a TO-247 package configured for surface‑mount assembly.

How does thermal range affect deployment in harsh environments?


The rated operating range from -55°C to +175°C permits use where both low‑temperature start‑up and high‑temperature resilience are required.

What channel configuration and gate mode does it use?


It is an N‑channel device operating in enhancement mode, suitable for common low‑side and high‑side switch designs.

What electrical characteristics reduce switching losses during operation?


A maximum drain‑source resistance of 2.70mΩ and a forward diode voltage of 1.2V together reduce conduction and recovery losses under heavy currents.

Is the device compliant with restricted‑substance requirements?


Yes, it meets RoHS requirements for restricted materials.

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