Infineon BSZ Type P-Channel MOSFET, -40 A, -30 V P, 8-Pin TDSON BSZ120P03NS3GATMA1
- N° de stock RS:
- 258-0719
- Référence fabricant:
- BSZ120P03NS3GATMA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 paquet de 5 unités)*
4,01 €
(TVA exclue)
4,85 €
(TVA incluse)
Informations sur le stock actuellement non accessibles - Veuillez vérifier plus tard
Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 45 | 0,802 € | 4,01 € |
| 50 - 120 | 0,706 € | 3,53 € |
| 125 - 245 | 0,658 € | 3,29 € |
| 250 - 495 | 0,61 € | 3,05 € |
| 500 + | 0,568 € | 2,84 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 258-0719
- Référence fabricant:
- BSZ120P03NS3GATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -40A | |
| Maximum Drain Source Voltage Vds | -30V | |
| Package Type | TDSON | |
| Series | BSZ | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 12mΩ | |
| Channel Mode | P | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1.1V | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Typical Gate Charge Qg @ Vgs | 30nC | |
| Maximum Power Dissipation Pd | 52W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | IEC 61249-2-21, RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -40A | ||
Maximum Drain Source Voltage Vds -30V | ||
Package Type TDSON | ||
Series BSZ | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 12mΩ | ||
Channel Mode P | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1.1V | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Typical Gate Charge Qg @ Vgs 30nC | ||
Maximum Power Dissipation Pd 52W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals IEC 61249-2-21, RoHS | ||
Automotive Standard No | ||
The Infineon highly innovative OptiMOS families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics.
Enhancement mode
Normal level, logic level or super logic level
Avalanche rated
Pb-free lead plating; RoHS compliant
Liens connexes
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