Infineon HEXFET N-Channel MOSFET, 100 A, 30 V, 8-Pin PQFN
- N° de stock RS:
- 257-9372
- Référence fabricant:
- IRFH5302TRPBF
- Fabricant:
- Infineon
Sous-total (1 bobine de 4000 unités)*
2 304,00 €
(TVA exclue)
2 788,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 21 décembre 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 4000 + | 0,576 € | 2 304,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 257-9372
- Référence fabricant:
- IRFH5302TRPBF
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | HEXFET | |
| Package Type | PQFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 3.5mΩ | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 29nC | |
| Maximum Power Dissipation Pd | 100W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 5mm | |
| Width | 6mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series HEXFET | ||
Package Type PQFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 3.5mΩ | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 29nC | ||
Maximum Power Dissipation Pd 100W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 5mm | ||
Width 6mm | ||
Automotive Standard No | ||
The Infineon IRFH series is the 30V single n channel strong IRFET power mosfet in a PQFN 5x6 package. The strong IRFET power mosfet family is optimized for low RDS (on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including dc motors, battery management systems, inverters, and dc-dc converters.
Industry standard surface mount power package
Product qualification according to JEDEC standard
Silicon optimized for applications switching below 100 kHz
Softer body diode compared to previous silicon generation
Wide portfolio available
Liens connexes
- Infineon HEXFET Type N-Channel MOSFET 30 V, 8-Pin PQFN IRFH5302TRPBF
- Infineon HEXFET Type N-Channel MOSFET 30 V, 8-Pin PQFN
- Infineon HEXFET Type N-Channel MOSFET 30 V PQFN
- Infineon HEXFET Type N-Channel MOSFET 30 V PQFN
- Infineon HEXFET Type N-Channel MOSFET 30 V PQFN
- Infineon HEXFET Type N-Channel MOSFET 30 V, 8-Pin PQFN IRFH5301TRPBF
- Infineon HEXFET Type N-Channel MOSFET 30 V PQFN IRFHM830TRPBF
- Infineon HEXFET Type N-Channel MOSFET 30 V PQFN IRLHM630TRPBF