Infineon HEXFET Type N-Channel MOSFET, 217 A, 40 V DirectFET IRF7480MTRPBF
- N° de stock RS:
- 257-9314
- Référence fabricant:
- IRF7480MTRPBF
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 paquet de 2 unités)*
3,32 €
(TVA exclue)
4,02 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- 4 764 unité(s) expédiée(s) à partir du 12 janvier 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 2 - 18 | 1,66 € | 3,32 € |
| 20 - 48 | 1,49 € | 2,98 € |
| 50 - 98 | 1,39 € | 2,78 € |
| 100 - 198 | 1,295 € | 2,59 € |
| 200 + | 1,205 € | 2,41 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 257-9314
- Référence fabricant:
- IRF7480MTRPBF
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 217A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | HEXFET | |
| Package Type | DirectFET | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 1.2mΩ | |
| Maximum Power Dissipation Pd | 96W | |
| Typical Gate Charge Qg @ Vgs | 123nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 217A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series HEXFET | ||
Package Type DirectFET | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 1.2mΩ | ||
Maximum Power Dissipation Pd 96W | ||
Typical Gate Charge Qg @ Vgs 123nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon IRF series is the 40V single n channel strong IRFET power mosfet in a direct FET ME package. The strong IRFET power mosfet family is optimized for low RDS (on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including dc motors, battery management systems, inverters, and dc-dc converters. End-applications include cordless power and gardening tools, light electric vehicles and e-bikes demanding a high level of ruggedness and energy efficiency.
Dual side cooling capability
Low package height of 0.7mm
Low parasitic (1 to 2 nH) inductance package
100 percent lead free (No ROHS exemption)
Silicon optimized for applications switching below 100 kHz
Product qualification according to JEDEC standard
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