Infineon HEXFET N-Channel MOSFET, 76 A, 200 V Enhancement TO-220 IRFB4127PBF
- N° de stock RS:
- 257-5807
- Référence fabricant:
- IRFB4127PBF
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 2 unités)*
12,94 €
(TVA exclue)
15,66 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
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- 788 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 2 - 18 | 6,47 € | 12,94 € |
| 20 - 48 | 5,62 € | 11,24 € |
| 50 - 98 | 5,24 € | 10,48 € |
| 100 - 198 | 4,855 € | 9,71 € |
| 200 + | 4,53 € | 9,06 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 257-5807
- Référence fabricant:
- IRFB4127PBF
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 76A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Series | HEXFET | |
| Package Type | TO-220 | |
| Mount Type | PCB | |
| Maximum Drain Source Resistance Rds | 20mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 375W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 76A | ||
Maximum Drain Source Voltage Vds 200V | ||
Series HEXFET | ||
Package Type TO-220 | ||
Mount Type PCB | ||
Maximum Drain Source Resistance Rds 20mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 375W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 200V Maximum Drain-Source Voltage, 375W Maximum Power Dissipation - IRFB4127PBF
This MOSFET is a high-voltage, enhancement-mode N-channel transistor designed for PCB mounting in a TO-220 package. It is intended for power switching and control tasks where substantial current handling and thermal capacity are required, and it operates across an extended industrial temperature range while meeting RoHS restrictions.
Features and Benefits:
• 20mΩ Rds(on) enabling reduced conduction losses
• 76A continuous drain current supporting high-load switching
• 200V drain-source rating permitting high-voltage applications
• 375W power dissipation improving thermal headroom
• 1.3V forward voltage minimising gate drive drop
• 76A continuous drain current supporting high-load switching
• 200V drain-source rating permitting high-voltage applications
• 375W power dissipation improving thermal headroom
• 1.3V forward voltage minimising gate drive drop
Applications
• Suitable for power-supply switching in industrial systems
• Used with motor drivers requiring high current handling
• Ideal for DC-DC converters in high-voltage rails
• Can be used for inverter-stage switching on PCBs
• Used with motor drivers requiring high current handling
• Ideal for DC-DC converters in high-voltage rails
• Can be used for inverter-stage switching on PCBs
What gate voltage limits must be observed?
The gate-to-source voltage must not exceed 20V to avoid damaging the gate dielectric.
What temperature range can it withstand during operation?
It is specified to function between -55°C and 175°C for broad industrial use.
Is the device suitable for surface mounting on circuit boards?
It is intended for PCB mounting in a through-hole TO-220 package for secure thermal and mechanical attachment.
Does it conform to environmental material restrictions?
The component is RoHS-compliant, meeting required restrictions on hazardous substances.
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