Références fabricant

Vishay IRFR9010 Type P-Channel Power MOSFET, -5.3 A, -50 V, 3-Pin TO-252 IRFR9010TRPBF

N° de stock RS:: 256-7310
Référence fabricant:: IRFR9010TRPBF
Fabricant:: Vishay

Vishay IRFR9010 Type P-Channel Power MOSFET, -5.3 A, -50 V, 3-Pin TO-252 IRFR9010TRPBF

Sous-total (1 bobine de 2000 unités)*

752,00 €

(TVA exclue)

910,00 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

Temporairement en rupture de stock

Expédition à partir du 11 février 2027

Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails

Unité	Prix par unité	la bobine*
2000 +	0,376 €	752,00 €

*Prix donné à titre indicatif

N° de stock RS:: 256-7310
Référence fabricant:: IRFR9010TRPBF
Fabricant:: Vishay

Spécifications

Documentation technique

Législations et de normes

Détails du produit

Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.

Sélectionner tout	Attribut	Valeur
	Marque	Vishay
	Channel Type	Type P
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	-5.3A
	Maximum Drain Source Voltage Vds	-50V
	Series	IRFR9010
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	0.5Ω
	Maximum Gate Source Voltage Vgs	20V
	Forward Voltage Vf	-5.5V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	9.1nC
	Maximum Power Dissipation Pd	25W
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Height	2.39mm
	Automotive Standard	No

	Sélectionner tout
	Marque Vishay
	Channel Type Type P
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id -5.3A
	Maximum Drain Source Voltage Vds -50V
	Series IRFR9010
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 0.5Ω
	Maximum Gate Source Voltage Vgs 20V
	Forward Voltage Vf -5.5V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 9.1nC
	Maximum Power Dissipation Pd 25W
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Height 2.39mm
	Automotive Standard No

Vishay IRFR9010 Series Power MOSFET, 50V Maximum Drain Source Voltage, 5.3A Maximum Continuous Drain Current - IRFR9010TRPBF

This power MOSFET is a P‑channel semiconductor device designed for switching and power-management roles in surface-mount assemblies. It operates across a wide thermal range and is suited to circuits requiring controlled high-current switching and moderate voltage handling in compact TO‑252 packaging.

Features and Benefits:

• 50V drain-to-source rating enables moderate-voltage switching
• 0.5Ω Rds(on) reduces conduction losses in load paths
• 5.3A continuous drain current supports sustained current delivery
• 9.1nC typical gate charge allows faster gate-drive response
• 25W maximum power dissipation permits higher thermal loading
• -55°C to +150°C operating range supports harsh environments

Applications

• Suitable for high-side switching in power rails
• Ideal for battery management and load disconnects
• Used with compact converters requiring surface mount
• Can be used for reverse-polarity protection circuits
• Suitable for thermal-stress testing in electronics validation

What package type does it use and how does that affect mounting?

It comes in a TO‑252 package designed for surface mounting, providing a low-profile option compatible with reflow processes and enabling thermal coupling to PCB copper for heat dissipation.

What gate-drive limitations should be considered during design?

The device tolerates up to 20V between gate and source, so gate drivers must remain within that range to avoid damaging the gate oxide.

How should thermal management be approached on a PCB?

Given a 25W maximum dissipation, designers should allocate adequate copper area or thermal vias beneath the package to spread heat and maintain junction temperature within safe limits.

Are there special considerations for switching performance?

The typical gate charge of 9.1nC implies moderate gate-drive energy

driver selection should balance switching speed against EMI and drive power.

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