Vishay IRFBG30 Type N-Channel Power MOSFET, 3.1 A, 1 kV Enhancement, 3-Pin TO-220AB IRFBG30PBF
- N° de stock RS:
- 541-1146
- Numéro d'article Distrelec:
- 171-15-229
- Référence fabricant:
- IRFBG30PBF
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 unité)*
4,20 €
(TVA exclue)
5,08 €
(TVA incluse)
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Unité | Prix par unité |
|---|---|
| 1 - 9 | 4,20 € |
| 10 - 49 | 3,78 € |
| 50 + | 3,49 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 541-1146
- Numéro d'article Distrelec:
- 171-15-229
- Référence fabricant:
- IRFBG30PBF
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 3.1A | |
| Maximum Drain Source Voltage Vds | 1kV | |
| Package Type | TO-220AB | |
| Series | IRFBG30 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.8V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 125W | |
| Maximum Operating Temperature | 150°C | |
| Width | 4.7mm | |
| Standards/Approvals | RoHS | |
| Length | 10.41mm | |
| Height | 9.01mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 3.1A | ||
Maximum Drain Source Voltage Vds 1kV | ||
Package Type TO-220AB | ||
Series IRFBG30 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.8V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 125W | ||
Maximum Operating Temperature 150°C | ||
Width 4.7mm | ||
Standards/Approvals RoHS | ||
Length 10.41mm | ||
Height 9.01mm | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
Vishay IRFBG30 Series Power MOSFET, 1000V Maximum Drain Source Voltage, 125W Maximum Power Dissipation - IRFBG30PBF
This power MOSFET is a high-voltage N-channel enhancement device designed for switching and power conversion in industrial electronic systems. It is supplied in a through-hole TO-220AB package and operates across a wide thermal range, making it suitable for demanding environments where sustained power handling and robust voltage tolerance are required.
Features and Benefits:
• 1000V drain-source rating enables high-voltage switching applications
• 125W maximum dissipation permits sustained power handling
• 5Ω maximum Rds(on) supports controlled conduction losses
• 3.1A continuous drain current suits moderate current loads
• 80nC typical gate charge facilitates predictable gate-drive requirements
• -55°C to 150°C operating range ensures wide-temperature reliability
• 125W maximum dissipation permits sustained power handling
• 5Ω maximum Rds(on) supports controlled conduction losses
• 3.1A continuous drain current suits moderate current loads
• 80nC typical gate charge facilitates predictable gate-drive requirements
• -55°C to 150°C operating range ensures wide-temperature reliability
Applications
• Suitable for high-voltage power supplies and converters
• Ideal for industrial motor-drive gate stages
• Used with avalanche protection in energy-management circuits
• Can be used for isolated switching in mains-related equipment
• Suitable for lab and prototyping through-hole assembly
• Ideal for industrial motor-drive gate stages
• Used with avalanche protection in energy-management circuits
• Can be used for isolated switching in mains-related equipment
• Suitable for lab and prototyping through-hole assembly
What gate-voltage limitations should be observed during design?
The device must not exceed a gate-source voltage of 20V to prevent gate-oxide stress.
How should thermal considerations be handled on a PCB-mounted assembly?
Mounting in a TO-220AB configuration with a suitable heatsink and low-thermal-resistance fastening improves heat transfer for the 125W dissipation rating.
What conduction behaviour can be expected at high drain voltages?
With a maximum drain-source voltage of 1000V and a maximum continuous drain current of 3.1A, designers should size snubbers and protection to manage switching transients and limit peak stress.
Are there constraints on package mounting or pin count for hardware layouts?
The part uses a three-pin through-hole arrangement, allowing straightforward insertion and mechanical fixation for prototyping or repair.
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