Vishay IRFBG30 Type N-Channel Power MOSFET, 3.1 A, 1 kV Enhancement, 3-Pin TO-220AB IRFBG30PBF
- N° de stock RS:
- 541-1146
- Numéro d'article Distrelec:
- 171-15-229
- Référence fabricant:
- IRFBG30PBF
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 unité)*
4,20 €
(TVA exclue)
5,08 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
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Unité | Prix par unité |
|---|---|
| 1 - 9 | 4,20 € |
| 10 - 49 | 3,78 € |
| 50 + | 3,49 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 541-1146
- Numéro d'article Distrelec:
- 171-15-229
- Référence fabricant:
- IRFBG30PBF
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 3.1A | |
| Maximum Drain Source Voltage Vds | 1kV | |
| Series | IRFBG30 | |
| Package Type | TO-220AB | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.8V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 125W | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.41mm | |
| Standards/Approvals | RoHS | |
| Width | 4.7mm | |
| Height | 9.01mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 3.1A | ||
Maximum Drain Source Voltage Vds 1kV | ||
Series IRFBG30 | ||
Package Type TO-220AB | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.8V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 125W | ||
Maximum Operating Temperature 150°C | ||
Length 10.41mm | ||
Standards/Approvals RoHS | ||
Width 4.7mm | ||
Height 9.01mm | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
Vishay IRFBG30 Series Power MOSFET, 1000V Drain Source Voltage, 3.1A Continuous Drain Current - IRFBG30PBF
This power MOSFET is a high-voltage N-channel device intended for switching and power-control roles in industrial electronics. It is a through-hole component supplied in a TO-220AB package designed for applications requiring substantial power handling and high drain-to-source voltage capability.
Features and Benefits:
• 1000V drain-to-source rating enables high-voltage switching
• 3.1A continuous drain current supports moderate load currents
• 125W power dissipation allows elevated power handling
• 5Ω maximum Rds minimises conduction losses under load
• 80nC typical gate charge permits predictable gate-drive sizing
• 150°C maximum operating temperature sustains high-heat environments
• 3.1A continuous drain current supports moderate load currents
• 125W power dissipation allows elevated power handling
• 5Ω maximum Rds minimises conduction losses under load
• 80nC typical gate charge permits predictable gate-drive sizing
• 150°C maximum operating temperature sustains high-heat environments
Applications
• Suitable for high-voltage power converters in automation systems
• Ideal for motor drive front-ends in electrical equipment
• Used for industrial switching in control assemblies
• Can be used for protection circuits requiring high Vds
• Used with discrete power stages in mechanical actuation systems
• Ideal for motor drive front-ends in electrical equipment
• Used for industrial switching in control assemblies
• Can be used for protection circuits requiring high Vds
• Used with discrete power stages in mechanical actuation systems
What gate drive margin is permissible for safe operation?
The device can tolerate gate-source voltages up to 20V, so design gate drivers to operate within that range.
How does the package influence thermal management?
The TO-220AB through-hole package permits direct heatsinking to manage the 125W dissipation under appropriate mounting and cooling conditions.
What environmental temperature range can it withstand?
It operates reliably between -55°C and 150°C, accommodating wide industrial temperature extremes.
What pin configuration should designers expect?
The component is a three-pin through-hole device, compatible with standard PCB layouts for discrete power components.
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