ROHM RH6P040BH Type N-Channel MOSFET, 40 A, 100 V Enhancement HSMT-8 RH6P040BHTB1
- N° de stock RS:
- 252-3154
- Référence fabricant:
- RH6P040BHTB1
- Fabricant:
- ROHM
Sous-total (1 bobine de 3000 unités)*
2 373,00 €
(TVA exclue)
2 871,00 €
(TVA incluse)
Informations sur le stock actuellement non accessibles - Veuillez vérifier plus tard
Unité | Prix par unité | la bobine* |
|---|---|---|
| 3000 + | 0,791 € | 2 373,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 252-3154
- Référence fabricant:
- RH6P040BHTB1
- Fabricant:
- ROHM
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | ROHM | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | RH6P040BH | |
| Package Type | HSMT-8 | |
| Maximum Drain Source Resistance Rds | 2.7mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 16.7nC | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 104W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, Pb Free | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque ROHM | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series RH6P040BH | ||
Package Type HSMT-8 | ||
Maximum Drain Source Resistance Rds 2.7mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 16.7nC | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 104W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, Pb Free | ||
Automotive Standard AEC-Q101 | ||
The Rohms offers a RH series of a power mosfet with low on resistance and suitable for switching. It is halogen free with 100% Rg and UIS tested with the input volage of 100 V.
Operating junction and storage temperature range is -55℃ to +150℃
Mounted on a cu board
Drain current is 40 A
Power dissipation is 59 W
Liens connexes
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