Infineon BSS Type P-Channel MOSFET, 630 mA, -20 V Enhancement, 3-Pin SOT-323 BSS209PWH6327XTSA1
- N° de stock RS:
- 250-0554
- Référence fabricant:
- BSS209PWH6327XTSA1
- Fabricant:
- Infineon
Sous-total (1 paquet de 10 unités)*
3,12 €
(TVA exclue)
3,78 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
- Plus 6 980 unité(s) expédiée(s) à partir du 02 novembre 2026
Unité | Prix par unité | le paquet* |
|---|---|---|
| 10 - 90 | 0,312 € | 3,12 € |
| 100 - 490 | 0,295 € | 2,95 € |
| 500 - 990 | 0,186 € | 1,86 € |
| 1000 - 2490 | 0,169 € | 1,69 € |
| 2500 + | 0,143 € | 1,43 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 250-0554
- Référence fabricant:
- BSS209PWH6327XTSA1
- Fabricant:
- Infineon
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 630mA | |
| Maximum Drain Source Voltage Vds | -20V | |
| Package Type | SOT-323 | |
| Series | BSS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 550mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 81W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | +150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 630mA | ||
Maximum Drain Source Voltage Vds -20V | ||
Package Type SOT-323 | ||
Series BSS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 550mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 81W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature +150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
Infineon BSS Series MOSFET, 20V Maximum Drain-Source Voltage, 0.63A Maximum Continuous Drain Current - BSS209PWH6327XTSA1
Features and Benefits:
• 80nC gate charge enables predictable switching performance
• 1V forward voltage minimises voltage drop in diode conduction
• 81W power dissipation supports transient thermal loading
• ±20V gate-source tolerance allows flexible drive arrangements
Applications
• Ideal for Compact power-rail reverse-polarity protection
• Used with battery-management sensing and switching
• Can be used for portable device power sequencing
• Useful in surface-mount signal-level power switching
What operating temperatures can it withstand?
How many pins and what mounting style does it use?
What certifications or approvals are present for industry use?
What is the maximum permitted drain-source voltage and gate limit?
Liens connexes
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