Infineon BSP N-Channel MOSFET, 120 mA, 600 V Enhancement, 3-Pin SOT-223 BSP125H6433XTMA1
- N° de stock RS:
- 250-0528
- Référence fabricant:
- BSP125H6433XTMA1
- Fabricant:
- Infineon
Sous-total (1 paquet de 5 unités)*
5,32 €
(TVA exclue)
6,44 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
- Plus 3 910 unité(s) expédiée(s) à partir du 31 octobre 2026
Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 45 | 1,064 € | 5,32 € |
| 50 - 120 | 0,914 € | 4,57 € |
| 125 - 245 | 0,852 € | 4,26 € |
| 250 - 495 | 0,784 € | 3,92 € |
| 500 + | 0,736 € | 3,68 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 250-0528
- Référence fabricant:
- BSP125H6433XTMA1
- Fabricant:
- Infineon
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 120mA | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | BSP | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 45000mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Power Dissipation Pd | 81W | |
| Maximum Operating Temperature | +150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 120mA | ||
Maximum Drain Source Voltage Vds 600V | ||
Series BSP | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 45000mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Power Dissipation Pd 81W | ||
Maximum Operating Temperature +150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
Infineon BSP Series MOSFET, 600V Maximum Drain-Source Voltage, 81W Maximum Power Dissipation - BSP125H6433XTMA1
Features and Benefits:
• 81W power dissipation supports sustained thermal loads
• 0.12A continuous drain current suits low-current control paths
• 45,000mΩ on-resistance minimises conduction losses
• 80nC gate charge at 20V simplifies gate-drive design
Applications
• Ideal for automotive control circuits requiring qualification
• Used with Compact converters needing SOT-223 mounting
• Can be used for high-temperature electronic modules
• Suitable for surface-mount prototype and production boards
What gate voltage limits must be observed?
What thermal range can be expected during operation?
How many pins and what package type should PCB designers allow for?
What standards or approvals apply to this component?
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