Infineon BSP Type N-Channel MOSFET, 0.12 A, 40 V Depletion, 3-Pin SOT-223
- N° de stock RS:
- 250-0531
- Référence fabricant:
- BSP149H6906XTSA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 bobine de 1000 unités)*
645,00 €
(TVA exclue)
780,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Dernier stock RS
- 8 000 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
Unité | Prix par unité | la bobine* |
|---|---|---|
| 1000 - 1000 | 0,645 € | 645,00 € |
| 2000 - 2000 | 0,613 € | 613,00 € |
| 3000 + | 0,574 € | 574,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 250-0531
- Référence fabricant:
- BSP149H6906XTSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 0.12A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | BSP | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.4mΩ | |
| Channel Mode | Depletion | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Power Dissipation Pd | 81W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 0.12A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series BSP | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.4mΩ | ||
Channel Mode Depletion | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Power Dissipation Pd 81W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon makes N-channel Depletion mode small signal MOSFET transistor widely used in high-switching applications. It is avalanche rated and halogen-free. It is dv /dt rated and available with VGS(th) indicator on reel. The VDS is 200 V, RDS(on)max is 3.5 Ω while IDSS, min is 0.14 A.
Pb-free lead plating and Halogen-free
It comes in a SOT233
Liens connexes
- Infineon N-Channel MOSFET 200 V, 3-Pin SOT-223 BSP149H6906XTSA1
- Infineon SIPMOS® N-Channel MOSFET 200 V, 3-Pin SOT-223 BSP297H6327XTSA1
- Infineon SIPMOS® N-Channel MOSFET 200 V Depletion, 3-Pin SOT-223 BSP149H6327XTSA1
- Vishay N-Channel MOSFET 200 V, 3-Pin SOT-223 IRFL210TRPBF
- Infineon N-Channel MOSFET 100 V, 3-Pin SOT-223 BSP296NH6433XTMA1
- Infineon N-Channel MOSFET 240 V, 3-Pin SOT-223 BSP129H6906XTSA1
- Infineon N-Channel MOSFET 20 V, 3-Pin SOT-223 BSR802NL6327HTSA1
- Infineon N-Channel MOSFET 100 V, 3-Pin SOT-223 BSP316PH6327XTSA1
