Infineon BSP Type N-Channel MOSFET, 0.12 A, 40 V Depletion, 3-Pin SOT-223 BSP129H6906XTSA1

N° de stock RS:: 250-0530
Référence fabricant:: BSP129H6906XTSA1
Fabricant:: Infineon

Infineon BSP Type N-Channel MOSFET, 0.12 A, 40 V Depletion, 3-Pin SOT-223 BSP129H6906XTSA1

Offre groupée disponible

Sous-total (1 paquet de 5 unités)*

2,49 €

(TVA exclue)

3,015 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 75,00 €

Dernier stock RS

4 545 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution

Unité	Prix par unité	le paquet*
5 - 45	0,498 €	2,49 €
50 - 120	0,448 €	2,24 €
125 - 245	0,412 €	2,06 €
250 - 495	0,386 €	1,93 €
500 +	0,374 €	1,87 €

*Prix donné à titre indicatif

N° de stock RS:: 250-0530
Référence fabricant:: BSP129H6906XTSA1
Fabricant:: Infineon

Spécifications

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Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	0.12A
	Maximum Drain Source Voltage Vds	40V
	Series	BSP
	Package Type	SOT-223
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	1.4mΩ
	Channel Mode	Depletion
	Forward Voltage Vf	1V
	Maximum Power Dissipation Pd	81W
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	80nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	AEC-Q101

	Sélectionner tout
	Marque Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 0.12A
	Maximum Drain Source Voltage Vds 40V
	Series BSP
	Package Type SOT-223
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 1.4mΩ
	Channel Mode Depletion
	Forward Voltage Vf 1V
	Maximum Power Dissipation Pd 81W
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 80nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard AEC-Q101

Datasheet - BSP129H6906XTSA1

Infineon SIPMOS® Series MOSFET, 280 mA Maximum Continuous Drain Current, 1.8W Maximum Power Dissipation - BSP129H6906XTSA1

This small-signal transistor is an effective solution for devices that require high voltage and surface mount capability. As a depletion mode N-channel MOSFET, it enables efficient operation in various electronic applications. With a maximum drain-source voltage of 240V and a continuous drain current capacity of 280mA, this product is well-suited for automation and automotive applications, making it a dependable choice for managing power in different electronic circuits.

Features & Benefits

• N-channel configuration supports efficient switching operations

• Depletion mode functionality ensures constant current performance

• High voltage ratings provide versatility in applications

• Low gate threshold voltage enhances system compatibility

• Surface mount design allows for space-efficient installations

• AEC-Q101 qualified, suitable for automotive usage

Applications

• Suitable for automotive control systems

• Can be used in power management circuits

• Consumer electronics for enhanced efficiency

How can proper installation be ensured for optimal performance?

Install the MOSFET on the PCB following specified mounting guidelines, ensuring correct thermal management for effective heat dissipation.

What should be considered for thermal management during operation?

Thermal resistance must be monitored, as the operational temperature ranges from -55°C to +150°C, requiring adequate PCB design to facilitate efficient heat conduction.

What type of gate drive is recommended for this product?

A gate voltage within the specified range of ±20V is essential for optimal switching characteristics, ensuring dependable operation across applications.

Can this MOSFET be utilised in high-speed switching applications?

Yes, it is designed to function effectively in high-speed switching scenarios, thanks to specified turn-on and turn-off delay times.

What should be noted regarding gate charge characteristics?

The total gate charge at 5V is approximately 3.8nC, optimising power efficiency during switching without placing excessive load on the driving circuits.