Infineon Dual N Channel Normal Level IPG20N06S4-15A 2 Type N-Channel MOSFET, 20 A, 60 V Dual N, 8-Pin SuperSO8 5 x 6
- N° de stock RS:
- 249-6917
- Référence fabricant:
- IPG20N06S415AATMA1
- Fabricant:
- Infineon
Sous-total (1 bobine de 5000 unités)*
2 590,00 €
(TVA exclue)
3 135,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 18 janvier 2027
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 5000 + | 0,518 € | 2 590,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 249-6917
- Référence fabricant:
- IPG20N06S415AATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SuperSO8 5 x 6 | |
| Series | IPG20N06S4-15A | |
| Pin Count | 8 | |
| Channel Mode | Dual N | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 22nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 50W | |
| Maximum Operating Temperature | 175°C | |
| Transistor Configuration | Dual N Channel Normal Level | |
| Standards/Approvals | RoHS Compliant | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SuperSO8 5 x 6 | ||
Series IPG20N06S4-15A | ||
Pin Count 8 | ||
Channel Mode Dual N | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 22nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 50W | ||
Maximum Operating Temperature 175°C | ||
Transistor Configuration Dual N Channel Normal Level | ||
Standards/Approvals RoHS Compliant | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS is power MOSFET for automotive applications. Operating channel is N. It is AEC Q101 qualified. MSL1 up to 260°C peak reflow. Green Product (RoHS compliant) and it is 100% Avalanche tested.
175°C operating temperature
Liens connexes
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