Infineon Dual N Channel Normal Level IPG 2 Type N-Channel MOSFET, 20 A, 40 V Enhancement, 8-Pin SuperSO
- N° de stock RS:
- 229-1841
- Référence fabricant:
- IPG20N04S409ATMA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 paquet de 10 unités)*
12,84 €
(TVA exclue)
15,54 €
(TVA incluse)
Ajouter 70 unités pour bénéficier d'une livraison gratuite
Temporairement en rupture de stock
- 15 000 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 10 - 40 | 1,284 € | 12,84 € |
| 50 - 90 | 1,22 € | 12,20 € |
| 100 - 240 | 1,169 € | 11,69 € |
| 250 - 490 | 1,117 € | 11,17 € |
| 500 + | 1,04 € | 10,40 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 229-1841
- Référence fabricant:
- IPG20N04S409ATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | SuperSO | |
| Series | IPG | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 8.6mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 28nC | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 54W | |
| Forward Voltage Vf | 0.9V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Transistor Configuration | Dual N Channel Normal Level | |
| Height | 1mm | |
| Width | 5.9 mm | |
| Length | 5.15mm | |
| Standards/Approvals | RoHS Compliant | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type SuperSO | ||
Series IPG | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 8.6mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 28nC | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 54W | ||
Forward Voltage Vf 0.9V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Transistor Configuration Dual N Channel Normal Level | ||
Height 1mm | ||
Width 5.9 mm | ||
Length 5.15mm | ||
Standards/Approvals RoHS Compliant | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
The Infineon dual n channel normal level MOSFET has same thermal and electrical performance as a DPAK with the same die size. It's exposed pad provides excellent thermal transfer. It is two n channel in one package with 2 isolated lead frames.
It is RoHS compliant and AEC Q101 qualified
It has 175°C operating temperature
Liens connexes
- Infineon Dual N Channel Normal Level IPG 2 Type N-Channel MOSFET 40 V Enhancement, 8-Pin SuperSO
- Infineon Dual IPG 2 Type N-Channel Power Transistor 40 V Enhancement, 8-Pin SuperSO
- Infineon Dual N IPG 2 Type N-Channel Power Transistor 40 V Enhancement, 8-Pin SuperSO
- Infineon Dual IPG 2 Type N-Channel Power Transistor 40 V Enhancement, 8-Pin SuperSO IPG20N04S4L11AATMA1
- Infineon Dual N IPG 2 Type N-Channel Power Transistor 40 V Enhancement, 8-Pin SuperSO IPG20N04S412AATMA1
- Infineon Dual N Channel Normal Level Enhancement Mode IPG16N10S4-61 Type N-Channel MOSFET 100 V Dual N, 8-Pin
- Infineon Dual N Channel Normal Level IPG20N06S4-15A 2 Type N-Channel MOSFET 60 V Dual N, 8-Pin SuperSO8 5 x 6
- Infineon IPG Dual N-Channel MOSFET 40 V P TDSON