Infineon ISP Type P-Channel MOSFET, -3.70 A, 60 V Enhancement, 3-Pin SOT-223 ISP650P06NMXTSA1
- N° de stock RS:
- 243-9277
- Référence fabricant:
- ISP650P06NMXTSA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 2 unités)*
3,48 €
(TVA exclue)
4,22 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- 158 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 2 - 18 | 1,74 € | 3,48 € |
| 20 - 48 | 1,47 € | 2,94 € |
| 50 - 98 | 1,38 € | 2,76 € |
| 100 - 198 | 1,29 € | 2,58 € |
| 200 + | 1,18 € | 2,36 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 243-9277
- Référence fabricant:
- ISP650P06NMXTSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -3.70A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-223 | |
| Series | ISP | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 65mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 81W | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | +150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -3.70A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-223 | ||
Series ISP | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 65mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 81W | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature +150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
Infineon ISP Series MOSFET, 60V Maximum Drain‑Source Voltage, 81W Maximum Power Dissipation - ISP650P06NMXTSA1
This MOSFET is a P‑channel enhancement device designed for surface‑mounted power switching in demanding temperature environments. It operates across a broad thermal range and is supplied in a Compact SOT‑223 package suited to assemblies requiring a through‑power handling footprint while conserving board area.
Features and Benefits:
• 65mΩ Rds(on) reduces conduction losses for efficient power transfer
• -3.70A continuous drain current supports steady‑state load operation
• 80 nC typical gate charge enables controlled switching dynamics
• 60V drain‑source rating allows higher‑voltage switching applications
• 81W power dissipation manages thermal energy in Compact packages
• -3.70A continuous drain current supports steady‑state load operation
• 80 nC typical gate charge enables controlled switching dynamics
• 60V drain‑source rating allows higher‑voltage switching applications
• 81W power dissipation manages thermal energy in Compact packages
Applications
• Suitable for automotive control modules requiring temperature resilience
• Ideal for power rails in industrial control electronics
• Used for load switching in battery management systems
• Can be used for reverse‑polarity and high‑side switching circuits
• Ideal for power rails in industrial control electronics
• Used for load switching in battery management systems
• Can be used for reverse‑polarity and high‑side switching circuits
What ambient temperatures can it operate across?
It functions across a wide range from -55°C to +150°C, enabling use in harsh thermal conditions.
What package and mounting method does it use?
It is supplied in a SOT‑223 package designed for surface mounting to printed circuit boards.
What gate voltage limits must be observed?
The gate‑to‑source maximum rating is 20V and should not be exceeded to prevent damage.
Is it suitable for automotive‑grade applications?
It conforms to AEC‑Q101, supporting qualification for automotive electronic implementations.
Does it meet environmental substance restrictions?
It is RoHS‑compliant, meeting restrictions on certain hazardous materials.
Liens connexes
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