Infineon ISP Type P-Channel MOSFET, 3.9 A, 100 V Enhancement, 3-Pin SOT-223 ISP16DP10LMXTSA1
- N° de stock RS:
- 235-4876
- Référence fabricant:
- ISP16DP10LMXTSA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 bobine de 1000 unités)*
403,00 €
(TVA exclue)
488,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 31 mars 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 1000 - 1000 | 0,403 € | 403,00 € |
| 2000 - 2000 | 0,383 € | 383,00 € |
| 3000 + | 0,359 € | 359,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 235-4876
- Référence fabricant:
- ISP16DP10LMXTSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 3.9A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | ISP | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.38Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 5W | |
| Typical Gate Charge Qg @ Vgs | 11.6nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Width | 1.2 mm | |
| Standards/Approvals | No | |
| Length | 6.1mm | |
| Height | 5.35mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 3.9A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series ISP | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.38Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 5W | ||
Typical Gate Charge Qg @ Vgs 11.6nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Width 1.2 mm | ||
Standards/Approvals No | ||
Length 6.1mm | ||
Height 5.35mm | ||
Automotive Standard No | ||
The Infineon OptiMOS™ P-Channel MOSFETs 100V in SOT-223 package represents the new technology targeted for battery management, load switch and reverse polarity protection applications. The main advantage of a P-channel device is the reduction of design complexity in medium and low power applications. Its easy Interface to MCU, fast switching as well as avalanche ruggedness makes it suitable for high quality demanding applications. It is available in normal level featuring a wide RDS(on) range and improves efficiency at low loads due to low Qg. It is used in Battery management, Industrial automation.
Ideal for high and low switching frequency
Avalanche ruggedness
Industry standard footprint surface mount package
Robust, reliable performance
Increased security of supply
Liens connexes
- Infineon P-Channel MOSFET Transistor 100 V, 3-Pin SOT-223 ISP16DP10LMXTSA1
- Infineon P-Channel MOSFET Transistor 100 V, 3-Pin SOT-223 ISP20EP10LMXTSA1
- Infineon P-Channel MOSFET Transistor 150 V, 3-Pin SOT-223 ISP14EP15LMXTSA1
- Infineon P-Channel MOSFET Transistor 100 V, 3-Pin SOT-223 ISP98DP10LMXTSA1
- Infineon SIPMOS® P-Channel MOSFET Transistor 60 V, 3-Pin SOT-223 BSP171PH6327XTSA1
- Infineon P-Channel MOSFET 60 V, 3-Pin SOT-223 ISP25DP06LMSATMA1
- Infineon N-Channel MOSFET Transistor 500 V, 3-Pin SOT-223 IPN50R2K0CEATMA1
- Infineon N-Channel MOSFET Transistor 500 V, 3-Pin SOT-223 IPN50R3K0CEATMA1