Infineon iPB N-Channel MOSFET, 273 A, 100 V N, 3-Pin TO-263 IPB048N15N5ATMA1
- N° de stock RS:
- 242-5818
- Référence fabricant:
- IPB048N15N5ATMA1
- Fabricant:
- Infineon
Sous-total (1 bobine de 1000 unités)*
2 666,00 €
(TVA exclue)
3 226,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 1 000 unité(s) expédiée(s) à partir du 26 octobre 2026
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Unité | Prix par unité | la bobine* |
|---|---|---|
| 1000 + | 2,666 € | 2 666,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 242-5818
- Référence fabricant:
- IPB048N15N5ATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 273A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | iPB | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.7mΩ | |
| Channel Mode | N | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 81W | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 273A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series iPB | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.7mΩ | ||
Channel Mode N | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 81W | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Infineon iPB Series MOSFET, 100V Drain Source Voltage, 273A Continuous Drain Current - IPB048N15N5ATMA1
This MOSFET is a high-current N-channel switching device designed for surface-mount power applications where efficient conduction and thermal resilience are required. It operates across an extended temperature range and is intended for use in demanding power conversion and motor-drive environments, providing a Compact solution in a TO-263 package for board-mounted assemblies.
Features and Benefits:
• Low Rds(on) 1.7 mΩ reduces conduction losses and improves efficiency
• High continuous drain current 273 A supports heavy-current loads
• Maximum Vds 100 V enables robust voltage margin in switching stages
• Power dissipation 81 W allows sustained thermal loading in tight layouts
• Typical gate charge 80 nC balances switching speed and drive requirements
• Gate-source rating 20 V permits substantial drive headroom for control
• High continuous drain current 273 A supports heavy-current loads
• Maximum Vds 100 V enables robust voltage margin in switching stages
• Power dissipation 81 W allows sustained thermal loading in tight layouts
• Typical gate charge 80 nC balances switching speed and drive requirements
• Gate-source rating 20 V permits substantial drive headroom for control
Applications
• Suitable for power-conversion stages in industrial inverters
• Ideal for high-current motor-drive circuits on PCBs
• Used with synchronous-rectification topologies in power supplies
• Can be used for battery-management systems requiring high current
• Recommended for compact, board-mounted switch modules requiring surface-mount components
• Ideal for high-current motor-drive circuits on PCBs
• Used with synchronous-rectification topologies in power supplies
• Can be used for battery-management systems requiring high current
• Recommended for compact, board-mounted switch modules requiring surface-mount components
What temperature range can it reliably operate within?
It is rated to operate from −55 °C up to 175 °C, accommodating high-temperature environments.
How does the package influence thermal performance?
The TO-263 surface-mount package provides a low-thermal-resistance path to the board for effective heat dissipation during high-power operation.
What gate-drive considerations should be observed?
The device accepts up to 20 V on the gate relative to source and has an 80 nC typical total gate charge, so driver capability must match switching frequency and desired transition times.
Is this suitable for automotive qualification?
It is not specified as an automotive-grade device and therefore should not be assumed compliant with automotive-specific standards.
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