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Infineon iPB N-Channel MOSFET, 273 A, 100 V N, 7-Pin TO-263 IPB017N10N5ATMA1

N° de stock RS:: 242-5817
Référence fabricant:: IPB017N10N5ATMA1
Fabricant:: Infineon

Infineon iPB N-Channel MOSFET, 273 A, 100 V N, 7-Pin TO-263 IPB017N10N5ATMA1

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Sous-total (1 unité)*

6,01 €

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7,27 €

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Unité	Prix par unité
1 - 9	6,01 €
10 - 24	5,71 €
25 - 49	5,48 €
50 - 99	5,23 €
100 +	4,86 €

*Prix donné à titre indicatif

N° de stock RS:: 242-5817
Référence fabricant:: IPB017N10N5ATMA1
Fabricant:: Infineon

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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	273A
	Maximum Drain Source Voltage Vds	100V
	Package Type	TO-263
	Series	iPB
	Mount Type	Surface
	Pin Count	7
	Maximum Drain Source Resistance Rds	1.7mΩ
	Channel Mode	N
	Maximum Gate Source Voltage Vgs	20V
	Forward Voltage Vf	1.2V
	Maximum Power Dissipation Pd	81W
	Typical Gate Charge Qg @ Vgs	80nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	Sélectionner tout
	Marque Infineon
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 273A
	Maximum Drain Source Voltage Vds 100V
	Package Type TO-263
	Series iPB
	Mount Type Surface
	Pin Count 7
	Maximum Drain Source Resistance Rds 1.7mΩ
	Channel Mode N
	Maximum Gate Source Voltage Vgs 20V
	Forward Voltage Vf 1.2V
	Maximum Power Dissipation Pd 81W
	Typical Gate Charge Qg @ Vgs 80nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - IPB017N10N5ATMA1

Infineon iPB Series MOSFET, 100V Maximum Drain Source Voltage, 273A Maximum Continuous Drain Current - IPB017N10N5ATMA1

This MOSFET is a high-current N-channel switching device designed for surface-mount power applications. It operates across a wide temperature span and is intended for demanding industrial and power-conversion environments where robust current handling and thermal resilience are required.

Features and Benefits:

• Low on-resistance delivers minimal conduction losses and improved efficiency
• High continuous drain current enables sustained heavy-load operation
• 100V drain rating supports common intermediate-voltage topologies
• 81W power dissipation allows higher power throughput in Compact packages
• 80nC typical gate charge supports responsive switching in converters
• 20V gate rating permits broad gate-drive voltage flexibility

Applications

• Suitable for high-current DC-DC power converters
• Ideal for synchronous rectification in power supplies
• Used with motor-drive half-bridge stages
• Can be used for server and telecoms power rails
• Suitable for battery-management and inverter systems

What thermal extremes can this device withstand?

It is specified to operate from -55°C up to 175°C supporting wide-range industrial temperature demands.

How does the package type influence mounting and heat management?

The TO-263 surface-mount format enables direct PCB mounting with low thermal resistance paths for heatsinking arrangements.

What gate-drive considerations should be observed for switching performance?

With an 80nC typical gate charge and a 20V maximum gate rating, gate drivers must supply sufficient current while respecting the Vgs limit to achieve fast transitions.

What channel characteristics affect conduction and switching losses?

The device uses an N-channel architecture with a very low drain-source resistance which reduces conduction losses while maintaining high current capability.

Is this device intended for automotive qualification?

The part is not classified as automotive standard-compliant but meets RoHS environmental requirements.