Vishay EF Type N-Channel Power MOSFET, 6.5 A, 850 V Depletion, 3-Pin TO-220

N° de stock RS:: 239-8621
Référence fabricant:: SiHA17N80AEF-GE3
Fabricant:: Vishay

Vishay EF Type N-Channel Power MOSFET, 6.5 A, 850 V Depletion, 3-Pin TO-220

Sous-total (1 tube de 50 unités)*

63,55 €

(TVA exclue)

76,90 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

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1 050 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution

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Unité	Prix par unité	le tube*
50 +	1,271 €	63,55 €

*Prix donné à titre indicatif

N° de stock RS:: 239-8621
Référence fabricant:: SiHA17N80AEF-GE3
Fabricant:: Vishay

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Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Vishay
	Product Type	Power MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	6.5A
	Maximum Drain Source Voltage Vds	850V
	Package Type	TO-220
	Series	EF
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	0.305Ω
	Channel Mode	Depletion
	Maximum Power Dissipation Pd	34W
	Maximum Gate Source Voltage Vgs	30V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	63nC
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	+150°C
	Standards/Approvals	RoHS
	Automotive Standard	AEC-Q101

	Sélectionner tout
	Marque Vishay
	Product Type Power MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 6.5A
	Maximum Drain Source Voltage Vds 850V
	Package Type TO-220
	Series EF
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 0.305Ω
	Channel Mode Depletion
	Maximum Power Dissipation Pd 34W
	Maximum Gate Source Voltage Vgs 30V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 63nC
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature +150°C
	Standards/Approvals RoHS
	Automotive Standard AEC-Q101

Datasheet - SiHA17N80AEF-GE3

Vishay Series EF Power MOSFET, 850V Drain Source Voltage, 6.5A Drain Current - SiHA17N80AEF-GE3

This power MOSFET is a high-voltage switching transistor designed for demanding electrical and automotive contexts. It operates as an N-channel depletion device in a through-hole TO-220 surface package, providing a Compact solution for power conversion and control where robust voltage handling and thermal margin are required.

Features and Benefits:

• 850V maximum drain-source voltage for high-voltage applications • 6.5A continuous drain current enabling sustained load handling • 0.305 Ω Rds minimises conduction losses under load • 34W power dissipation supports elevated thermal budgets • 63 nC typical gate charge for predictable switching control • ±150 °C/-55 °C operating range offers wide temperature endurance

Applications

• Suitable for high-voltage DC-DC converter stages in industrial systems • Ideal for inverter front ends and power-factor circuits • Used for switch-mode power supplies in automation equipment • Can be used for automotive power electronics meeting AEC‑Q101 criteria • Used with gate drivers requiring defined charge characteristics

What gate-voltage limits should be observed during design?

The device tolerates gate excursion up to 30 V

designs should ensure gate‑drive circuits remain within this limit to prevent gate-oxide stress.

How should thermal management be implemented for reliable operation?

Given a 34W dissipation rating, attach an appropriate heatsink to the TO‑220 tab and ensure sufficient airflow to maintain junction temperatures within safe bounds.

What considerations apply to switching losses and driver selection?

With a typical gate charge of 63 nC, choose a driver capable of sourcing and sinking the required Peak currents to achieve the desired rise/fall times while managing switching losses.

Is the device suitable for automotive qualification processes?

It conforms to AEC‑Q101 standards for automotive MOSFETs, making it appropriate for designs that require automotive‑grade components.

What electrical polarity and channel behaviour should designers expect?

The transistor is an N‑channel depletion device, so circuit topology must account for its channel mode when implementing normally‑on or normally‑off switching arrangements.