Infineon IPT N-Channel MOSFET, 454 A, 60 V, 8-Pin HSOF-8 IPT008N06NM5LFATMA1
- N° de stock RS:
- 236-1585
- Référence fabricant:
- IPT008N06NM5LFATMA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 unité)*
7,26 €
(TVA exclue)
8,78 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 07 décembre 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité |
|---|---|
| 1 - 9 | 7,26 € |
| 10 - 24 | 6,91 € |
| 25 - 49 | 6,61 € |
| 50 - 99 | 6,31 € |
| 100 + | 5,89 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 236-1585
- Référence fabricant:
- IPT008N06NM5LFATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 454A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | HSOF-8 | |
| Series | IPT | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.8mΩ | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 185nC | |
| Maximum Power Dissipation Pd | 278W | |
| Forward Voltage Vf | 1V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Height | 2.4mm | |
| Length | 10.1mm | |
| Standards/Approvals | No | |
| Width | 10.58mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 454A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type HSOF-8 | ||
Series IPT | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.8mΩ | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 185nC | ||
Maximum Power Dissipation Pd 278W | ||
Forward Voltage Vf 1V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Height 2.4mm | ||
Length 10.1mm | ||
Standards/Approvals No | ||
Width 10.58mm | ||
Automotive Standard No | ||
Infineon IPT Series MOSFET, 60V Maximum Drain Source Voltage, 454A Maximum Continuous Drain Current - IPT008N06NM5LFATMA1
This MOSFET is a high-current switching transistor designed for surface-mounted power applications, offering robust thermal tolerance and substantial current capability for demanding circuits. It operates across a wide ambient range and is suited to systems requiring low conduction loss and significant power handling within a Compact package.
Features and Benefits:
• 60 V maximum drain voltage delivers high-voltage switching capability
• 454 A continuous drain current supports heavy current loads
• 0.8 mΩ maximum RDS(on) reduces conduction losses in power paths
• 278 W maximum power dissipation allows sustained high-power operation
• 185 nC typical gate charge enables predictable switching control
• ±20 V gate-source rating permits broad gate drive margins
• 454 A continuous drain current supports heavy current loads
• 0.8 mΩ maximum RDS(on) reduces conduction losses in power paths
• 278 W maximum power dissipation allows sustained high-power operation
• 185 nC typical gate charge enables predictable switching control
• ±20 V gate-source rating permits broad gate drive margins
Applications
• Suitable for high-current motor-drive stages
• Can be used for DC-DC converter output switches
• Ideal for power distribution in server power supplies
• Used with battery-management modules handling large currents
• Suitable for industrial inverter switching stages
• Can be used for DC-DC converter output switches
• Ideal for power distribution in server power supplies
• Used with battery-management modules handling large currents
• Suitable for industrial inverter switching stages
What thermal endurance can be expected in harsh environments?
It is rated to operate from −55 °C up to 150 °C, allowing use in wide temperature conditions.
How does the package influence mounting and layout?
The HSOF-8 surface-mount package facilitates Compact PCB placement and low-inductance connections for power traces.
What gate-drive considerations are necessary for switching?
Design gate drivers to supply sufficient charge for the 185 nC gate to achieve required switching speeds while respecting the ±20 V gate-source limit.
How should designers manage power dissipation in high-load scenarios?
Ensure PCB copper area and thermal vias are sized to handle the 278 W dissipation and maintain junction temperatures within limits.
What conduction performance can be expected during continuous operation?
Expect low on-state voltage drop due to the 0.8 mΩ maximum drain-source resistance, benefiting efficiency in continuous high-current conditions.
Liens connexes
- Infineon IPT N-Channel MOSFET 60 V, 8-Pin HSOF-8 IPT008N06NM5LFATMA1
- Infineon IPT N-Channel MOSFET 60 V Enhancement, 8-Pin PG-HSOF-8
- Infineon IPT N-Channel MOSFET 60 V Enhancement, 8-Pin PG-HSOF-8 IPT012N06NATMA1
- Infineon IPT N-Channel MOSFET, 155 A HSOF
- Infineon IPT N-Channel MOSFET, 155 A HSOF IPT059N15N3ATMA1
- Infineon IPT N-Channel MOSFET 40 V, 8-Pin HSOF-8
- Infineon IPT N-Channel MOSFET 40 V, 8-Pin HSOF-8 IPT60R040S7XTMA1
- Infineon IPT N-Channel MOSFET 80 V, 8-Pin HSOF-8 IPT013N08NM5LFATMA1