Infineon IPT Type N-Channel MOSFET, 400 A, 40 V Enhancement, 8-Pin HSOF-8 IPT60R055CFD7XTMA1
- N° de stock RS:
- 250-0595
- Référence fabricant:
- IPT60R055CFD7XTMA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 unité)*
6,08 €
(TVA exclue)
7,36 €
(TVA incluse)
Ajouter 13 unités pour bénéficier d'une livraison gratuite
Temporairement en rupture de stock
- Expédition à partir du 23 juillet 2026
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Unité | Prix par unité |
|---|---|
| 1 - 9 | 6,08 € |
| 10 - 24 | 5,80 € |
| 25 - 49 | 5,54 € |
| 50 - 99 | 5,29 € |
| 100 + | 4,93 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 250-0595
- Référence fabricant:
- IPT60R055CFD7XTMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 400A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | IPT | |
| Package Type | HSOF-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.7mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Power Dissipation Pd | 81W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 400A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series IPT | ||
Package Type HSOF-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.7mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Power Dissipation Pd 81W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon technologies. The latest CoolMOS CFD7 is the successor to the CoolMOS CFD2 series and is an optimized platform tailored to target soft switching applications such as phase shift full-bridge (ZVS) and LLC resulting from reduced gate charge(Qg), best-in-class reverse recovery charge (Qrr) and improved turn off behaviour CoolMOS CFD7 offers highest efficiency in resonant topologies.
Best-in-class RDS(on) in SMD and THD packages
Excellent hard commutation ruggedness
Highest reliability for resonant topologies
Highest efficiency with outstanding ease-of-use / performance trade-off
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