Infineon ISP Type P-Channel MOSFET, 990 mA, 100 V Enhancement, 3-Pin SOT-223 ISP20EP10LMXTSA1
- N° de stock RS:
- 235-4879
- Référence fabricant:
- ISP20EP10LMXTSA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 paquet de 10 unités)*
1,85 €
(TVA exclue)
2,24 €
(TVA incluse)
Ajouter 450 unités pour bénéficier d'une livraison gratuite
Temporairement en rupture de stock
- Expédition à partir du 10 juin 2026
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 10 - 90 | 0,185 € | 1,85 € |
| 100 - 240 | 0,175 € | 1,75 € |
| 250 - 490 | 0,168 € | 1,68 € |
| 500 - 990 | 0,161 € | 1,61 € |
| 1000 + | 0,15 € | 1,50 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 235-4879
- Référence fabricant:
- ISP20EP10LMXTSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 990mA | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | ISP | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 4.2W | |
| Typical Gate Charge Qg @ Vgs | 3.5nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 6.7mm | |
| Length | 7.3mm | |
| Width | 1.8 mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 990mA | ||
Maximum Drain Source Voltage Vds 100V | ||
Series ISP | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 4.2W | ||
Typical Gate Charge Qg @ Vgs 3.5nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 6.7mm | ||
Length 7.3mm | ||
Width 1.8 mm | ||
Automotive Standard No | ||
The Infineon OptiMOS™ P-Channel MOSFETs 100V in SOT-223 package represents the new technology targeted for battery management, load switch and reverse polarity protection applications. The main advantage of a P-channel device is the reduction of design complexity in medium and low power applications. Its easy Interface to MCU, fast switching as well as avalanche ruggedness makes it suitable for high quality demanding applications. It is available in normal level featuring a wide RDS(on) range and improves efficiency at low loads due to low Qg. It is used in Battery management, Industrial automation.
Ideal for high and low switching frequency
Avalanche ruggedness
Industry standard footprint surface mount package
Robust, reliable performance
Increased security of supply
Liens connexes
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