Infineon ISC Type N-Channel MOSFET, 288 A, 60 V Enhancement, 8-Pin TDSON
- N° de stock RS:
- 233-4396
- Référence fabricant:
- ISZ034N06LM5ATMA1
- Fabricant:
- Infineon
Sous-total (1 bobine de 5000 unités)*
3 580,00 €
(TVA exclue)
4 330,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 22 mars 2027
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 5000 + | 0,716 € | 3 580,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 233-4396
- Référence fabricant:
- ISZ034N06LM5ATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 288A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | ISC | |
| Package Type | TDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 3.4mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1V | |
| Maximum Power Dissipation Pd | 83W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 53nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 3.4mm | |
| Width | 1.1 mm | |
| Length | 3.4mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 288A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series ISC | ||
Package Type TDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 3.4mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1V | ||
Maximum Power Dissipation Pd 83W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 53nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 3.4mm | ||
Width 1.1 mm | ||
Length 3.4mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon 60 V power MOSFET ISZ034N06LM5 comprises a perfect fit for optimized efficiency and power density solutions such as synchronous rectification in switched mode power supplies (SMPS), for telecom bricks and server applications, as well as portable chargers. The small footprint of only 3.3x3.3mm combined with outstanding electrical performance further contributes towards best-in-class power density and form factor improvement in the end application.
Very low voltage overshoot
Ultra low charges
Liens connexes
- Infineon ISC Type N-Channel MOSFET 60 V Enhancement, 8-Pin TDSON ISZ034N06LM5ATMA1
- Infineon ISC Type N-Channel MOSFET 60 V Enhancement, 8-Pin TDSON
- Infineon ISC Type N-Channel MOSFET 60 V Enhancement, 8-Pin TDSON ISC011N06LM5ATMA1
- Infineon ISC Type N-Channel MOSFET 40 V Enhancement, 8-Pin TDSON
- Infineon ISC Type N-Channel MOSFET 40 V Enhancement, 8-Pin TDSON ISC012N04LM6ATMA1
- Infineon ISC Type N-Channel N-Channel Mosfet 120 V Enhancement, 8-Pin PG-TDSON-8 ISC078N12NM6ATMA1
- Infineon ISC Type N-Channel MOSFET 120 V Enhancement, 8-Pin PG-TDSON-8 ISC320N12LM6ATMA1
- Infineon ISC Type N-Channel MOSFET 120 V Enhancement, 8-Pin PG-TDSON-8 ISC110N12NM6ATMA1
