Infineon ISC Type N-Channel MOSFET, 62 A, 120 V Enhancement, 8-Pin PG-TDSON-8 ISC110N12NM6ATMA1
- N° de stock RS:
- 349-146
- Référence fabricant:
- ISC110N12NM6ATMA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 paquet de 10 unités)*
13,34 €
(TVA exclue)
16,14 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 5 000 unité(s) expédiée(s) à partir du 07 janvier 2026
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 10 - 90 | 1,334 € | 13,34 € |
| 100 - 240 | 1,267 € | 12,67 € |
| 250 + | 1,174 € | 11,74 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 349-146
- Référence fabricant:
- ISC110N12NM6ATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 62A | |
| Maximum Drain Source Voltage Vds | 120V | |
| Series | ISC | |
| Package Type | PG-TDSON-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 11mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 15.4nC | |
| Maximum Power Dissipation Pd | 94W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC61249-2-21, JEDEC, J-STD-020, RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 62A | ||
Maximum Drain Source Voltage Vds 120V | ||
Series ISC | ||
Package Type PG-TDSON-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 11mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 15.4nC | ||
Maximum Power Dissipation Pd 94W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC61249-2-21, JEDEC, J-STD-020, RoHS | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
The Infineon OptiMOS 6 Power Transistor is an N channel, normal level MOSFET designed for high efficiency power applications. It features very low on-resistance (RDS(on)), reducing conduction losses and improving energy efficiency. The transistor offers an excellent gate charge x RDS(on) product (FOM), enhancing switching performance. With very low reverse recovery charge (Qrr), it minimizes switching losses, making it ideal for fast-switching applications. It also has a high avalanche energy rating, ensuring robustness under transient conditions. Additionally, the MOSFET operates at a 175°C temperature, providing high thermal endurance for demanding applications.
Optimized for high frequency switching and synchronous rectification
Pb free lead plating and RoHS compliant
Halogen free according to IEC61249-2-21
MSL 1 classified according to J-STD-020
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