Infineon ISC Type N-Channel MOSFET, 24 A, 120 V Enhancement, 8-Pin PG-TDSON-8 ISC320N12LM6ATMA1
- N° de stock RS:
- 349-151
- Référence fabricant:
- ISC320N12LM6ATMA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 paquet de 10 unités)*
8,34 €
(TVA exclue)
10,09 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 4 970 unité(s) expédiée(s) à partir du 29 décembre 2025
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 10 - 90 | 0,834 € | 8,34 € |
| 100 - 240 | 0,792 € | 7,92 € |
| 250 - 490 | 0,734 € | 7,34 € |
| 500 - 990 | 0,676 € | 6,76 € |
| 1000 + | 0,651 € | 6,51 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 349-151
- Référence fabricant:
- ISC320N12LM6ATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 24A | |
| Maximum Drain Source Voltage Vds | 120V | |
| Package Type | PG-TDSON-8 | |
| Series | ISC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 32mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 43W | |
| Typical Gate Charge Qg @ Vgs | 4.1nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC61249-2-21, J-STD-020, RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 24A | ||
Maximum Drain Source Voltage Vds 120V | ||
Package Type PG-TDSON-8 | ||
Series ISC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 32mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 43W | ||
Typical Gate Charge Qg @ Vgs 4.1nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC61249-2-21, J-STD-020, RoHS | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
The Infineon OptiMOS 6 Power Transistor is an N channel, logic level MOSFET designed for high efficiency power applications. It features very low on-resistance (RDS(on)), reducing conduction losses and improving energy efficiency. The transistor offers an excellent gate charge x RDS(on) product (FOM), enhancing switching performance. With very low reverse recovery charge (Qrr), it minimizes switching losses, making it ideal for fast-switching applications. It also has a high avalanche energy rating, ensuring robustness under transient conditions. Additionally, the MOSFET operates at a 175°C temperature, providing high thermal endurance for demanding applications.
Optimized for high frequency switching and synchronous rectification
Pb free lead plating and RoHS compliant
Halogen free according to IEC61249-2-21
MSL 1 classified according to J-STD-020
Liens connexes
- Infineon ISC N-Channel MOSFET 120 V, 8-Pin PG-TDSON-8 ISC032N12LM6ATMA1
- Infineon ISC N-Channel MOSFET 120 V, 8-Pin PG-TDSON-8 ISC078N12NM6ATMA1
- Infineon ISC N-Channel MOSFET 120 V, 8-Pin PG-TDSON-8 ISC110N12NM6ATMA1
- Infineon ISC N-Channel MOSFET 200 V, 8-Pin PG-TDSON-8 ISC151N20NM6ATMA1
- Infineon ISC N-Channel MOSFET 200 V, 8-Pin PG-TDSON-8 ISC130N20NM6ATMA1
- Infineon ISC N-Channel MOSFET 100 V, 8-Pin PG-TDSON-8 ISC035N10NM5LF2ATMA1
- Infineon ISC N-Channel MOSFET 135 V, 8-Pin PG-TDSON-8 ISC037N13NM6ATMA1
- Infineon ISC N-Channel MOSFET 135 V, 8-Pin PG-TDSON-8 ISC046N13NM6ATMA1