Infineon ISC Type N-Channel MOSFET, 288 A, 60 V Enhancement, 8-Pin TDSON ISC011N06LM5ATMA1
- N° de stock RS:
- 233-4393
- Référence fabricant:
- ISC011N06LM5ATMA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 paquet de 5 unités)*
20,22 €
(TVA exclue)
24,465 €
(TVA incluse)
Informations sur le stock actuellement non accessibles - Veuillez vérifier plus tard
Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 20 | 4,044 € | 20,22 € |
| 25 - 45 | 3,478 € | 17,39 € |
| 50 - 120 | 3,276 € | 16,38 € |
| 125 - 245 | 3,034 € | 15,17 € |
| 250 + | 2,792 € | 13,96 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 233-4393
- Référence fabricant:
- ISC011N06LM5ATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 288A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TDSON | |
| Series | ISC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.15mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 1.89kW | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 170nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.1mm | |
| Height | 5.35mm | |
| Width | 1.2 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 288A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TDSON | ||
Series ISC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.15mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 1.89kW | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 170nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Length 6.1mm | ||
Height 5.35mm | ||
Width 1.2 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon MOSFET in the SuperSO8 package extends the OptiMOS 5 and 3 product portfolio and enables higher power density in addition to improved robustness, responding to the need for lower system cost and increased performance. It has low reverse recovery charge (Qrr) which improves the system reliability by providing a significant reduction of voltage overshoot, which minimizes the need for snubber circuits, resulting in less engineering cost and effort.
Higher operating temperature rating to 175°C
Superior thermal performance
Liens connexes
- Infineon ISC Type N-Channel MOSFET 60 V Enhancement, 8-Pin TDSON
- Infineon ISC Type N-Channel MOSFET 60 V Enhancement, 8-Pin TDSON ISZ034N06LM5ATMA1
- Infineon ISC Type N-Channel MOSFET 40 V Enhancement, 8-Pin TDSON
- Infineon ISC Type N-Channel MOSFET 40 V Enhancement, 8-Pin TDSON ISC012N04LM6ATMA1
- Infineon ISC Type N-Channel MOSFET 120 V Enhancement, 8-Pin PG-TDSON-8 ISC320N12LM6ATMA1
- Infineon ISC Type N-Channel MOSFET 120 V Enhancement, 8-Pin PG-TDSON-8 ISC110N12NM6ATMA1
- Infineon ISC Type N-Channel MOSFET 100 V Enhancement, 8-Pin PG-TDSON-8 ISC035N10NM5LF2ATMA1
- Infineon ISC Type N-Channel N-Channel Mosfet 120 V Enhancement, 8-Pin PG-TDSON-8 ISC078N12NM6ATMA1