STMicroelectronics SCTWA35N65G2V-4 Type N-Channel MOSFET, 45 A, 650 V Enhancement, 4-Pin Hip-247 SCTWA35N65G2V-4
- N° de stock RS:
- 233-0473
- Référence fabricant:
- SCTWA35N65G2V-4
- Fabricant:
- STMicroelectronics
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 unité)*
13,16 €
(TVA exclue)
15,92 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
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- 241 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité |
|---|---|
| 1 - 4 | 13,16 € |
| 5 - 9 | 12,82 € |
| 10 - 24 | 12,47 € |
| 25 - 49 | 12,16 € |
| 50 + | 11,86 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 233-0473
- Référence fabricant:
- SCTWA35N65G2V-4
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 45A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | SCTWA35N65G2V-4 | |
| Package Type | Hip-247 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 67mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 240W | |
| Forward Voltage Vf | 3.3V | |
| Typical Gate Charge Qg @ Vgs | 73nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 200°C | |
| Length | 20.1mm | |
| Standards/Approvals | No | |
| Height | 5.1mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 45A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series SCTWA35N65G2V-4 | ||
Package Type Hip-247 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 67mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 240W | ||
Forward Voltage Vf 3.3V | ||
Typical Gate Charge Qg @ Vgs 73nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 200°C | ||
Length 20.1mm | ||
Standards/Approvals No | ||
Height 5.1mm | ||
Automotive Standard No | ||
The STMicroelectronics silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
Very fast and robust intrinsic body diode
Low capacitances
Source sensing pin for increased efficiency
Liens connexes
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- STMicroelectronics SCTW90 Type N-Channel MOSFET 650 V Enhancement, 3-Pin Hip-247
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