STMicroelectronics SCTWA35N65G2V-4 Type N-Channel MOSFET, 45 A, 650 V Enhancement, 4-Pin Hip-247 SCTWA35N65G2V-4
- N° de stock RS:
- 233-0473
- Référence fabricant:
- SCTWA35N65G2V-4
- Fabricant:
- STMicroelectronics
Offre groupée disponible
Sous-total (1 unité)*
13,16 €
(TVA exclue)
15,92 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 241 unité(s) expédiée(s) à partir du 26 janvier 2026
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Unité | Prix par unité |
|---|---|
| 1 - 4 | 13,16 € |
| 5 - 9 | 12,82 € |
| 10 - 24 | 12,47 € |
| 25 - 49 | 12,16 € |
| 50 + | 11,86 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 233-0473
- Référence fabricant:
- SCTWA35N65G2V-4
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 45A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | SCTWA35N65G2V-4 | |
| Package Type | Hip-247 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 67mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 73nC | |
| Forward Voltage Vf | 3.3V | |
| Maximum Power Dissipation Pd | 240W | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 200°C | |
| Height | 5.1mm | |
| Standards/Approvals | No | |
| Width | 21.1 mm | |
| Length | 20.1mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 45A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series SCTWA35N65G2V-4 | ||
Package Type Hip-247 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 67mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 73nC | ||
Forward Voltage Vf 3.3V | ||
Maximum Power Dissipation Pd 240W | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 200°C | ||
Height 5.1mm | ||
Standards/Approvals No | ||
Width 21.1 mm | ||
Length 20.1mm | ||
Automotive Standard No | ||
The STMicroelectronics silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
Very fast and robust intrinsic body diode
Low capacitances
Source sensing pin for increased efficiency
Liens connexes
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- STMicroelectronics SCTWA90N65G2V-4 Type N-Channel MOSFET 650 V Enhancement, 4-Pin Hip-247 SCTWA90N65G2V-4
- STMicroelectronics SCT Type N-Channel MOSFET 650 V Depletion, 3-Pin Hip-247