STMicroelectronics SCTWA90N65G2V-4 Type N-Channel MOSFET, 119 A, 650 V Enhancement, 4-Pin Hip-247 SCTWA90N65G2V-4
- N° de stock RS:
- 213-3945
- Référence fabricant:
- SCTWA90N65G2V-4
- Fabricant:
- STMicroelectronics
Offre groupée disponible
Sous-total (1 unité)*
27,23 €
(TVA exclue)
32,95 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 02 septembre 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité |
|---|---|
| 1 - 4 | 27,23 € |
| 5 - 9 | 26,51 € |
| 10 - 24 | 25,84 € |
| 25 + | 25,19 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 213-3945
- Référence fabricant:
- SCTWA90N65G2V-4
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 119A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | Hip-247 | |
| Series | SCTWA90N65G2V-4 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 24mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 2.5V | |
| Maximum Power Dissipation Pd | 656W | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Typical Gate Charge Qg @ Vgs | 157nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 200°C | |
| Height | 5.1mm | |
| Length | 15.9mm | |
| Width | 21.1 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 119A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type Hip-247 | ||
Series SCTWA90N65G2V-4 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 24mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 2.5V | ||
Maximum Power Dissipation Pd 656W | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Typical Gate Charge Qg @ Vgs 157nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 200°C | ||
Height 5.1mm | ||
Length 15.9mm | ||
Width 21.1 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The STMicroelectronics SCTWA90N65G2V-4 silicon carbide Power MOSFET device has been developed using advanced and innovative 2nd generation SiC MOSFET technology, features remarkably low on-resistance per unit area and very good switching performance.
High speed switching performance
Very high operating junction temperature capability
Very fast and robust intrinsic body diode
Extremely low gate charge and input capacitance
Source sensing pin for increased efficiency
Liens connexes
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