onsemi Isolated Type N-Channel SiC Power Module, 304 A, 1200 V, 36-Pin F2 NXH006P120MNF2PTG
- N° de stock RS:
- 229-6510
- Référence fabricant:
- NXH006P120MNF2PTG
- Fabricant:
- onsemi
Sous-total (1 unité)*
257,89 €
(TVA exclue)
312,05 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
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- Plus 30 unité(s) expédiée(s) à partir du 16 mars 2026
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Unité | Prix par unité |
|---|---|
| 1 + | 257,89 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 229-6510
- Référence fabricant:
- NXH006P120MNF2PTG
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Product Type | SiC Power Module | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 304A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | F2 | |
| Mount Type | Chassis | |
| Pin Count | 36 | |
| Typical Gate Charge Qg @ Vgs | 847nC | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Maximum Power Dissipation Pd | 950W | |
| Forward Voltage Vf | 6V | |
| Minimum Operating Temperature | -40°C | |
| Transistor Configuration | Isolated | |
| Maximum Operating Temperature | 175°C | |
| Width | 57 mm | |
| Standards/Approvals | Halide Free, Pb-Free, RoHS | |
| Height | 17mm | |
| Length | 63.3mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Product Type SiC Power Module | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 304A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type F2 | ||
Mount Type Chassis | ||
Pin Count 36 | ||
Typical Gate Charge Qg @ Vgs 847nC | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Maximum Power Dissipation Pd 950W | ||
Forward Voltage Vf 6V | ||
Minimum Operating Temperature -40°C | ||
Transistor Configuration Isolated | ||
Maximum Operating Temperature 175°C | ||
Width 57 mm | ||
Standards/Approvals Halide Free, Pb-Free, RoHS | ||
Height 17mm | ||
Length 63.3mm | ||
Automotive Standard No | ||
The ON Semiconductor power module containing an 1200 V SiC MOSFET half−bridge and a thermistor in an F2 package. It is typically used in solar inverter, UPS, electrical vehicle charging stations and industrial power.
Options with pre−applied thermal interface material
Options with solderable pins and press−fit pins
Pb−free
RoHS compliant
Liens connexes
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