STMicroelectronics 3 Phase A2U Type N-Channel SiC Power Module, 75 A, 1200 V Enhancement, 8-Pin ACEPACK 2
- N° de stock RS:
- 249-6719
- Référence fabricant:
- A2U12M12W2-F2
- Fabricant:
- STMicroelectronics
Sous-total (1 plateau de 18 unités)*
4 164,678 €
(TVA exclue)
5 039,262 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 28 décembre 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le plateau* |
|---|---|---|
| 18 + | 231,371 € | 4 164,68 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 249-6719
- Référence fabricant:
- A2U12M12W2-F2
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Product Type | SiC Power Module | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 75A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | ACEPACK 2 | |
| Series | A2U | |
| Mount Type | Chassis | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 17mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 18 V | |
| Forward Voltage Vf | 2.9V | |
| Minimum Operating Temperature | -40°C | |
| Typical Gate Charge Qg @ Vgs | 298nC | |
| Transistor Configuration | 3 Phase | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | UL | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Product Type SiC Power Module | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 75A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type ACEPACK 2 | ||
Series A2U | ||
Mount Type Chassis | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 17mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 18 V | ||
Forward Voltage Vf 2.9V | ||
Minimum Operating Temperature -40°C | ||
Typical Gate Charge Qg @ Vgs 298nC | ||
Transistor Configuration 3 Phase | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals UL | ||
Automotive Standard AEC-Q101 | ||
The STMicroelectronics power module represents a leg of a T-type 3-level inverter topology that integrates the advanced silicon carbide Power MOSFET technology. This module leverages the innovative properties of the wide-bandgap SiC material and a high-thermal-performance substrate. The result is exceptionally low on-resistance per unit area and excellent switching performance that is virtually independent of temperature.
3-level topology
ACEPACK 2 power module
13 mΩ of typical RDS(on) each switch
Insulation voltage UL certified of 2.5 kVrms
Integrated NTC temperature sensor
DBC Cu-Al2O3-Cu based
Press fit contact pins
An NTC sensor completes the design
Liens connexes
- STMicroelectronics SiC Power Module 1200 V ACEPACK 2 A2U12M12W2-F2
- STMicroelectronics SiC Power Module 1200 V ACEPACK 2 A2F12M12W2-F1
- onsemi SiC N-Channel SiC Power Module 1200 V, 36-Pin F2 NXH006P120MNF2PTG
- STMicroelectronics M1F Quad SiC MOSFET 1200 V, 32-Pin ACEPACK DMT-32 M1F45M12W2-1LA
- STMicroelectronics M2P45M12W2 Hex SiC N-Channel MOSFET 1200 V, 32-Pin ACEPACK DMT-32 M2P45M12W2-1LA
- STMicroelectronics M2TP80M12W2 8 SiC N-Channel MOSFET 1200 V, 32-Pin ACEPACK DMT-32 M2TP80M12W2-2LA
- STMicroelectronics SCT SiC N-Channel SiC Power Module 1200 V Depletion, 3-Pin HiP247 SCT20N120AG
- STMicroelectronics SCT SiC N-Channel SiC Power Module 1200 V Depletion, 3-Pin HiP247 SCT10N120AG