Infineon IAUS300N08S5N011T N-Channel MOSFET, 400 A, 80 V Enhancement, 16-Pin HDSOP IAUS300N08S5N011TATMA1
- N° de stock RS:
- 228-6525
- Référence fabricant:
- IAUS300N08S5N011TATMA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 2 unités)*
13,44 €
(TVA exclue)
16,26 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 3 600 unité(s) expédiée(s) à partir du 12 octobre 2026
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 2 - 8 | 6,72 € | 13,44 € |
| 10 - 18 | 6,055 € | 12,11 € |
| 20 - 48 | 5,645 € | 11,29 € |
| 50 - 98 | 5,31 € | 10,62 € |
| 100 + | 4,90 € | 9,80 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 228-6525
- Référence fabricant:
- IAUS300N08S5N011TATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 400A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | HDSOP | |
| Series | IAUS300N08S5N011T | |
| Mount Type | Surface | |
| Pin Count | 16 | |
| Maximum Drain Source Resistance Rds | 1.1mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 375W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | +175°C | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 400A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type HDSOP | ||
Series IAUS300N08S5N011T | ||
Mount Type Surface | ||
Pin Count 16 | ||
Maximum Drain Source Resistance Rds 1.1mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 375W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature +175°C | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
Infineon IAUS300N08S5N011T Series MOSFET, 80V Maximum Drain Source Voltage, 400A Maximum Continuous Drain Current - IAUS300N08S5N011TATMA1
This MOSFET is a high-current switching device designed for demanding automotive and industrial environments, offering N-channel enhancement-mode operation in a Compact surface-mount package. It is intended to control large drain currents and withstand elevated temperatures while providing low conduction losses for power conversion and switching applications.
Features and Benefits:
• 400A continuous drain current provides high-current switching capability
• 1.1mΩ Rds(on) minimises conduction losses during load cycles
• 80V drain-source rating allows higher-voltage system compatibility
• 375W maximum power dissipation supports heavy-duty thermal loading
• ±20V gate tolerance permits robust gate-drive voltages
• -55°C to 175°C operating range enables wide-temperature reliability
• 1.1mΩ Rds(on) minimises conduction losses during load cycles
• 80V drain-source rating allows higher-voltage system compatibility
• 375W maximum power dissipation supports heavy-duty thermal loading
• ±20V gate tolerance permits robust gate-drive voltages
• -55°C to 175°C operating range enables wide-temperature reliability
Applications
• Suitable for automotive powertrain inverter stages
• Ideal for high-current DC-DC converters in vehicles
• Used with traction motor controllers in electric vehicles
• Can be used for industrial motor-drive switching
• Used for high-power battery management and distribution
• Ideal for high-current DC-DC converters in vehicles
• Used with traction motor controllers in electric vehicles
• Can be used for industrial motor-drive switching
• Used for high-power battery management and distribution
What package type and mounting method does it use?
It is supplied in an HDSOP package intended for surface mounting which facilitates Compact board layouts and thermal management.
What diode characteristic should be considered for reverse conduction?
The intrinsic diode exhibits a forward voltage of 1.2V which informs conduction losses during freewheeling intervals.
How many electrical connections are available on the device?
The component provides 16 pins to support gate, drain and source routing for high-current board designs.
What semiconductor channel and operating mode does it employ?
The device uses an N-type channel operating in enhancement mode suitable for standard MOSFET gate-drive architectures.
Liens connexes
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