Infineon IPTC Type N-Channel MOSFET, 396 A, 80 V Enhancement, 16-Pin HDSOP IPTC012N08NM5ATMA1
- N° de stock RS:
- 233-4373
- Référence fabricant:
- IPTC012N08NM5ATMA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 2 unités)*
15,43 €
(TVA exclue)
18,67 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 1 548 unité(s) expédiée(s) à partir du 31 août 2026
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 2 - 8 | 7,715 € | 15,43 € |
| 10 - 18 | 6,635 € | 13,27 € |
| 20 - 48 | 6,25 € | 12,50 € |
| 50 - 98 | 5,79 € | 11,58 € |
| 100 + | 5,32 € | 10,64 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 233-4373
- Référence fabricant:
- IPTC012N08NM5ATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 396A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | HDSOP | |
| Series | IPTC | |
| Mount Type | Surface | |
| Pin Count | 16 | |
| Maximum Drain Source Resistance Rds | 1.2mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 175nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 375W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 175°C | |
| Width | 10.3mm | |
| Length | 10.1mm | |
| Height | 2.35mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 396A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type HDSOP | ||
Series IPTC | ||
Mount Type Surface | ||
Pin Count 16 | ||
Maximum Drain Source Resistance Rds 1.2mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 175nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 375W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 175°C | ||
Width 10.3mm | ||
Length 10.1mm | ||
Height 2.35mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon IPTC012N08NM5 is part of OptiMOS 5 power MOSFET in TOLT in that TO-Leaded top side-cooling package for superior thermal performance. This innovative package combined with the key features of OptiMOS 5 technology allows best-in-class products in 80 V as well as high current rating 300 A for high power density designs. With top side-cooling setup the drain is exposed at the surface of the package and 95 percent of the heat dissipation can be promoted directly to the heatsink achieving 20 percent better RthJA and 50 percent improved RthJC compared to TOLL package. With bottom side cooling packages like TOLL or D2PAK, the heat is dissipated via the PCB to the heatsink causing high power losses.
Negative stand-off
Saving in cooling system
Increased system efficiency enabling extended battery life time
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