Infineon CoolSiC N channel-Channel Power MOSFET, 68 A, 400 V Enhancement, 16-Pin PG-HDSOP-16 IMLT40R025M2HXTMA1
- N° de stock RS:
- 762-909
- Référence fabricant:
- IMLT40R025M2HXTMA1
- Fabricant:
- Infineon
Visuel non contractuel
Offre groupée disponible
Sous-total (1 unité)*
7,58 €
(TVA exclue)
9,17 €
(TVA incluse)
Informations sur le stock actuellement non accessibles - Veuillez vérifier plus tard
Unité | Prix par unité |
|---|---|
| 1 - 9 | 7,58 € |
| 10 - 49 | 6,14 € |
| 50 - 99 | 4,70 € |
| 100 + | 3,77 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 762-909
- Référence fabricant:
- IMLT40R025M2HXTMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | N channel | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 68A | |
| Maximum Drain Source Voltage Vds | 400V | |
| Package Type | PG-HDSOP-16 | |
| Series | CoolSiC | |
| Mount Type | Surface Mount | |
| Pin Count | 16 | |
| Maximum Drain Source Resistance Rds | 25.4mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 4.3V | |
| Typical Gate Charge Qg @ Vgs | 36nC | |
| Maximum Power Dissipation Pd | 214W | |
| Maximum Operating Temperature | 175°C | |
| Height | 15.2mm | |
| Standards/Approvals | RoHS | |
| Length | 10.1mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type N channel | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 68A | ||
Maximum Drain Source Voltage Vds 400V | ||
Package Type PG-HDSOP-16 | ||
Series CoolSiC | ||
Mount Type Surface Mount | ||
Pin Count 16 | ||
Maximum Drain Source Resistance Rds 25.4mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 4.3V | ||
Typical Gate Charge Qg @ Vgs 36nC | ||
Maximum Power Dissipation Pd 214W | ||
Maximum Operating Temperature 175°C | ||
Height 15.2mm | ||
Standards/Approvals RoHS | ||
Length 10.1mm | ||
Automotive Standard No | ||
- Pays d'origine :
- MY
The Infineon CoolSiC MOSFET is Ideal for high frequency switching and synchronous rectific and features Benchmark gate threshold voltage. Additionally it features XT interconnection technology for best‑in‑class thermal performance.
100% avalanche tested
Recommended gate driving voltage
Qualified for industrial applications
Used for energy storage, UPS and battery formation
Liens connexes
- Infineon CoolSiC N channel-Channel Power MOSFET 400 V Enhancement, 16-Pin PG-HDSOP-16 IMLT40R015M2HXTMA1
- Infineon CoolSiC N channel-Channel Power MOSFET 400 V Enhancement, 16-Pin PG-HDSOP-16 IMLT40R011M2HXTMA1
- Infineon CoolSiC N channel-Channel Power MOSFET 400 V Enhancement, 16-Pin PG-HDSOP-16 IMLT40R036M2HXTMA1
- Infineon CoolSiC N channel-Channel Power MOSFET 650 V Enhancement, 16-Pin PG-HDSOP-16 IMLT65R075M2HXTMA1
- Infineon CoolSiC N channel-Channel Power MOSFET 400 V Enhancement, 16-Pin PG-HDSOP-16 IMLT40R045M2HXTMA1
- Infineon CoolSiC Type N-Channel MOSFET 650 V Enhancement, 16-Pin PG-HDSOP-16 IMLT65R015M2HXTMA1
- Infineon CoolSiC Type N-Channel MOSFET 650 V Enhancement, 16-Pin PG-HDSOP-16 IMLT65R020M2HXTMA1
- Infineon CoolSiC Type N-Channel MOSFET 650 V Enhancement, 16-Pin PG-HDSOP-16 IMLT65R060M2HXTMA1
