Infineon CoolSiC N-Channel Power MOSFET, 144 A, 400 V Enhancement, 16-Pin PG-HDSOP-16 IMLT40R011M2HXTMA1
- N° de stock RS:
- 762-911
- Référence fabricant:
- IMLT40R011M2HXTMA1
- Fabricant:
- Infineon
Visuel non contractuel
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 unité)*
16,82 €
(TVA exclue)
20,35 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 1 690 unité(s) expédiée(s) à partir du 21 septembre 2026
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Unité | Prix par unité |
|---|---|
| 1 - 9 | 16,82 € |
| 10 - 99 | 11,84 € |
| 100 - 499 | 9,67 € |
| 500 - 1799 | 9,34 € |
| 1800 + | 8,92 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 762-911
- Référence fabricant:
- IMLT40R011M2HXTMA1
- Fabricant:
- Infineon
Spécifications
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Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | Power MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 144A | |
| Maximum Drain Source Voltage Vds | 400V | |
| Package Type | PG-HDSOP-16 | |
| Series | CoolSiC | |
| Mount Type | Surface | |
| Pin Count | 16 | |
| Maximum Drain Source Resistance Rds | 11.3mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 85nC | |
| Maximum Power Dissipation Pd | 429W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 4.3V | |
| Maximum Gate Source Voltage Vgs | 23V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Width | 2.35mm | |
| Length | 10.1mm | |
| Height | 15.2mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type Power MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 144A | ||
Maximum Drain Source Voltage Vds 400V | ||
Package Type PG-HDSOP-16 | ||
Series CoolSiC | ||
Mount Type Surface | ||
Pin Count 16 | ||
Maximum Drain Source Resistance Rds 11.3mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 85nC | ||
Maximum Power Dissipation Pd 429W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 4.3V | ||
Maximum Gate Source Voltage Vgs 23V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Width 2.35mm | ||
Length 10.1mm | ||
Height 15.2mm | ||
Automotive Standard No | ||
- Pays d'origine :
- MY
The Infineon CoolSiC MOSFET is Ideal for high frequency switching and synchronous rectific and features Benchmark gate threshold voltage. Additionally it features XT interconnection technology for best‑in‑class thermal performance.
100% avalanche tested
Recommended gate driving voltage
Qualified for industrial applications
Used for energy storage, UPS and battery formation
Liens connexes
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