Vishay E Type N-Channel Power MOSFET, 25 A, 650 V Enhancement, 3-Pin TO-263

N° de stock RS:: 228-2841
Référence fabricant:: SIHB120N60E-T1-GE3
Fabricant:: Vishay

Vishay E Type N-Channel Power MOSFET, 25 A, 650 V Enhancement, 3-Pin TO-263

Sous-total (1 bobine de 800 unités)*

1 929,60 €

(TVA exclue)

2 335,20 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

Temporairement en rupture de stock

Expédition à partir du 03 décembre 2026

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Unité	Prix par unité	la bobine*
800 +	2,412 €	1 929,60 €

*Prix donné à titre indicatif

N° de stock RS:: 228-2841
Référence fabricant:: SIHB120N60E-T1-GE3
Fabricant:: Vishay

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Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Vishay
	Product Type	Power MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	25A
	Maximum Drain Source Voltage Vds	650V
	Package Type	TO-263
	Series	E
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	120mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.2V
	Maximum Gate Source Voltage Vgs	30V
	Typical Gate Charge Qg @ Vgs	30nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	179W
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	Sélectionner tout
	Marque Vishay
	Product Type Power MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 25A
	Maximum Drain Source Voltage Vds 650V
	Package Type TO-263
	Series E
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 120mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.2V
	Maximum Gate Source Voltage Vgs 30V
	Typical Gate Charge Qg @ Vgs 30nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 179W
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - SIHB120N60E-T1-GE3

Vishay Series E Power MOSFET, 650V Drain Source Voltage, 25A Continuous Drain Current - SIHB120N60E-T1-GE3

This power MOSFET is a high-voltage switching transistor designed for surface‑mount applications in industrial and automation environments. It functions as an N‑channel enhancement device suited to power conversion and switching tasks where robust voltage handling and substantial current flow are required. The component is supplied in a TO‑263 package with three terminals and is intended for use across a wide temperature range.

Features and Benefits:

• 650V drain-source rating enables high‑voltage switching
• 25A continuous drain current supports sustained load conditions
• 120mΩ on‑resistance reduces conduction losses under load
• 179W power dissipation allows substantial thermal headroom
• 30V gate tolerance permits flexible gate‑drive voltages
• Typical gate charge 30nC speeds switching transitions

Applications

• Suitable for industrial motor‑drive converters handling high voltages
• Ideal for SMPS and power‑supply front‑end switching stages
• Used for LED drivers and lamp control requiring high VDS
• Can be used for inverter stages in renewable‑energy systems
• Suitable for general‑purpose high‑voltage power switching in automation

What temperature extremes can this device tolerate during operation?

It is rated to operate down to -55°C and up to 150°C, allowing use in harsh thermal environments.

How does the package influence mounting and thermal performance?

The TO‑263 surface‑mount package facilitates soldered board mounting and offers a thermal path suitable for heatsinking via PCB copper and external attachments.

What gate‑drive considerations should be observed for reliable switching?

Keep gate voltage within ±30V and account for the typical 30nC gate charge when designing driver circuitry to ensure adequate drive current and switching speed.

Are there constraints on automotive use?

It is not specified as meeting automotive standards, so it should not be assumed suitable for certified automotive applications.